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Novel Applications of Rapid Photothermal Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

R. Singh
Affiliation:
Center for Silicon Nanoelectronics, Dept. of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634-0915, raj.singh@ces.clemson.edu
V. Parihar
Affiliation:
Center for Silicon Nanoelectronics, Dept. of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634-0915, raj.singh@ces.clemson.edu
Y. Chen
Affiliation:
Lucent Technologies, Orlando, FL 32819
K. F. Poole
Affiliation:
Center for Silicon Nanoelectronics, Dept. of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634-0915, raj.singh@ces.clemson.edu
S. DeBoer
Affiliation:
Micron Technologies, Boise, ID 83707-0006
R. P. S. Thakur
Affiliation:
AG Associates, San Jose, CA 95134-2000
R. Sharangpani
Affiliation:
AG Associates, San Jose, CA 95134-2000
P. K. Vasudev
Affiliation:
National Instruments, Austin, TX 78759
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Abstract

In recent years, we have developed rapid photothermal chemical vapor deposition (RPCVD) technique. In RPCVD, photons with wavelength between 100–400 nm irradiate the side of the substrate where chemical reactions take place. RPCVD provides materials with minimum microscopic defects and minimum thermal and residual stress. Due to these features and low processing time and low processing temperature capabilities, RPCVD is ideal for process integration and manufacturibility. In this paper we have presented the results of high K and low K dielectrics. Detailed electrical, structural, characterization, and stress measurements combined with reliability of data indicate that RPCVD has the potential of meeting advanced manufacturing needs of semiconductor and other related industries.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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