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Normal and Anomalous Yield Stresses in a Tial Single Crystal and the Dominating Dislocation Mechanisms.

Published online by Cambridge University Press:  22 February 2011

N. Bird
Affiliation:
Department of Material, University of Oxford, Parks Road, Oxford 0X1 3PH, United Kingdom.
G. Taylor
Affiliation:
Department of Material, University of Oxford, Parks Road, Oxford 0X1 3PH, United Kingdom.
Y. Q. Sun
Affiliation:
Department of Material, University of Oxford, Parks Road, Oxford 0X1 3PH, United Kingdom.
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Abstract

Single crystal γ-TiAl with axial orientation [3 16 15] has been tested in compression between 4K and 1048K and the dislocation structures observed in TEM. The slip plane was found to be (111) over the entire temperature range tested. Three regimes exist in the variation of the yield stress with temperature, whereas the dislocation substructures are of two types, dominated by 30° 1/3[112] and 1/2 < 110] dislocations respectively. The anomalous yield stress is associated with 1/2 < 110] dislocations undergoing frequent cross-slip off the (111) plane.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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