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Non-Volatile Giant Resistance Switching in Metal-Insulator-Manganite Junctions

Published online by Cambridge University Press:  01 February 2011

Rickard Fors ,
Sergey I. Khartsev  and
Alexander M. Grishin
Rickard Fors
Affiliation:
Condensed Matter Physics, Royal Institute of Technology, SE-164 40 Stockholm-Kista, SWEDEN
Sergey I. Khartsev
Affiliation:
Condensed Matter Physics, Royal Institute of Technology, SE-164 40 Stockholm-Kista, SWEDEN
Alexander M. Grishin
Affiliation:
Condensed Matter Physics, Royal Institute of Technology, SE-164 40 Stockholm-Kista, SWEDEN
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Abstract

Heteroepitaxial CeO2(80nm)/L0.67Ca0.33MnO3(400nm) film structures have been pulsed laser deposited on LaAlO3(001) single crystals to fabricate two terminal resistance switching devices. Ag/CeO2/L0.67Ca0.33MnO3 junctions exhibit reproducible switching between a high resistance state (HRS) with insulating properties and a semiconducting or metallic low resistance state (LRS) with resistance ratios up to 105. Reversible electrical switching is a polar effect achievable both in continuous sweeping mode and in the pulse regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D7.10
Copyright
Copyright © Materials Research Society 2005

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References

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