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Nonmelt Laser Annealing of 1 Kev Boron Implanted Silicon

Published online by Cambridge University Press:  21 March 2011

Susan Earles ,
Mark Law ,
Kevin Jones ,
Somit Talwar  and
Sean Corcoran
Susan Earles
Affiliation:
SWAMP Center, University of Florida, Gainesville, USA
Mark Law
Affiliation:
SWAMP Center, University of Florida, Gainesville, USA
Kevin Jones
Affiliation:
SWAMP Center, University of Florida, Gainesville, USA
Somit Talwar
Affiliation:
Verdant, San Jose, CA, USA
Sean Corcoran
Affiliation:
Intel Corp, Portland OR, USA
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Abstract

Heavily-doped, ultra-shallow junctions in boron implanted silicon using pulsed laser annealing have been created. Laser energy in the nonmelt regime has been supplied to the silicon surface at a ramp rategreater than 1010°C/sec. This rapid ramp rate will help decrease dopant diffusion while supplying enough energy to the surface to produce dopant activation. High-dose, non-amorphizing 1 keV, 1e15 ions/cm2 boron is used. Four-point probe measurements (FPP) show a drop in sheet resistance withnonmelt laser annealing (NLA) alone. Transmission electron microscopy (TEM) shows the NLA dramatically affects the defect nucleation resulting in fewer defects with post annealing. Hall mobility and secondary ion mass spectroscopy (SIMS) results are also shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J4.1
Copyright
Copyright © Materials Research Society 2001

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