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Non-Local Recombination in “Tunnel Junctions” of Multijunction Amorphous Si Alloy Solar Cells

Published online by Cambridge University Press:  16 February 2011

Jingya Hou ,
Jianping Xi ,
Frank Kampas ,
Sanghoon Bae  and
S. J. Fonash
Jingya Hou
Affiliation:
Advanced Photovoltaic System Inc., Princeton, NJ 08543–7093
Jianping Xi
Affiliation:
Advanced Photovoltaic System Inc., Princeton, NJ 08543–7093
Frank Kampas
Affiliation:
Advanced Photovoltaic System Inc., Princeton, NJ 08543–7093
Sanghoon Bae
Affiliation:
The Pennsylvania State University, University Park, PA 16801
S. J. Fonash
Affiliation:
The Pennsylvania State University, University Park, PA 16801
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Abstract

This paper analyzes the charge transport in “tunnel junctions” of amorphous Si Material based multijunction solar cells and proposes some guidelines for making good “tunnel junctions” based on the analysis. The Mechanism of the current flow in these “tunnel” junctions is recombination. However, the recombination mechanism is not the usual localized recombination but is non-localized recombination. The energy analysis shows that the usual localized recombination will cause a large energy loss and result in much lower energy conversion efficiency and Voc than the experimentally measured values. In non-local recombination, opposite charge carriers located at different locations can recombine by tunneling into a defect state. Based on this Mechanism, a good “tunnel junction” should be thin, with a large defect state density in the middle region of the “tunnel junction”. Broad tail states material and a thin layer small band gap material in tunnel junctions may improve the non-local recombination by providing more intermediate states for charge to tunnel through.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 717
Copyright
Copyright © Materials Research Society 1994

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References

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