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Non-Gaussian Noise Statistics in Undoped Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  16 February 2011

G. M. Khera  and
J. Kakalios
G. M. Khera
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
J. Kakalios
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
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Abstract

Measurements of coplanar conductance fluctuations in undoped a-Si:H are described. Statistical tests show that the 1/f noise is non-Gaussian and has a power-law frequency dependent second spectrum, as observed in n-type a-Si:H. By careful consideration of the thermal history of the sample, the noise statistics are found to be different above and below the equilibration temperature, which has been associated with hydrogen diffusion. These results suggest that the non-Gaussian noise in a-Si:H is influenced by the motion of bonded hydrogen and is not significantly dependent upon doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 395
Copyright
Copyright © Materials Research Society 1994

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References

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