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Non-Equilibrium Carrier Dynamics in a-Si:H/a-SiC:H Multilayers

Published online by Cambridge University Press:  21 February 2011

M. Petrauskas ,
J. Kolenda ,
A. Galeckas ,
R. Schwarz ,
F. Wang ,
T. Muschik ,
T. Fischer  and
H. Weinert
M. Petrauskas
Affiliation:
Vilnius University, Department of Semiconductor Physics, LI - 2054 Vilnius, Lithuania
J. Kolenda
Affiliation:
Vilnius University, Department of Semiconductor Physics, LI - 2054 Vilnius, Lithuania
A. Galeckas
Affiliation:
Vilnius University, Department of Semiconductor Physics, LI - 2054 Vilnius, Lithuania
R. Schwarz
Affiliation:
Technical University of Munich, Physics Department E 16, W-8046 Garching, Germany
F. Wang
Affiliation:
Technical University of Munich, Physics Department E 16, W-8046 Garching, Germany
T. Muschik
Affiliation:
Technical University of Munich, Physics Department E 16, W-8046 Garching, Germany
T. Fischer
Affiliation:
Technical University of Munich, Physics Department E 16, W-8046 Garching, Germany
H. Weinert
Affiliation:
Humboldt University of Berlin, Institute for Optics and Spectroscopy, O- 1040 Berlin, Germany
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Abstract

For a series of a-Si:H/a-SiC:H quantum well structures and superlattices the diffusion coefficient for the lateral ambipolar motion of optically excited free carriers was measured using the transient grating technique. A significant dependence of the diffusion coefficient on the well layer thickness was found. With decreasing quantum well thickness the lateral mobility decreases. These observations may be explained assuming that scattering due to interface roughness is the dominant scattering process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 553
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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