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Nondestructive, Room Temperature Determination Of The Nature Of The Band-Bending (Carrier Type) In Group III Nitrides Using Contactless Electroreflectance And Surface Photovoltage Spectroscopy

Published online by Cambridge University Press:  10 February 2011

Wojciech Krystek ,
Fred H. Pollak ,
Z. C. Feng ,
M. Schurman  and
R. A. Stall
Wojciech Krystek
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York Brooklyn, NY 11210 WOKBC@CUNYVM.CUNY.EDU
Fred H. Pollak
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York Brooklyn, NY 11210
Z. C. Feng
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873
M. Schurman
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873
R. A. Stall
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873
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Abstract

Using contactless electroreflectance and surface photovoltage spectroscopy at room temperature we have nondestructively evaluated the band bending (carrier type) at the surface of epitaxial n- and p-type GaN/sapphire samples as well as at both the InGaN surface and the GaN at the InGaN/GaN interface of samples of epitaxial InGaN grown on top of thick GaN epilayers/sapphire, having average n- and p-type character.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 573
Copyright
Copyright © Materials Research Society 1998

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References

1. Nakamura, S. and Fasol, G., The Blue Laser Diode: GaN based Light Emitters and Lasers, Springer-Verlag, Berlin, 1997.Google Scholar
2 See, for example, GaN and Related Materials, ed. by Pearton, S. J., Gordon & Breach Sci. Pub., Australia, 1997.Google Scholar
3. Amano, H. et al, Inst. Phys. Conf. Ser. 106, 725 (1989); also, Jpn. J. Appl. Phys. 28, L2112 (1989).Google Scholar
4. Nakamura, S. et al, Jpn. J. Appl. Phys. 30, L1708 (1991).Google Scholar
5. Pollak, F.H. and Shen, H., Mat. Sci. and Eng. R10, 275 (1993).Google Scholar
6. Glembocki, O.J. and Shanabrook, B.V., Semiconductors and Semimetals, Vol.36, ed. Seiler, D.G. and Littler, C.L. (Academic, New York, 1992) p. 222.Google Scholar
7. Thurgate, S.M. et al Surface Science 310, 103 (1994).Google Scholar
8. Kronik, L. et al, J. Electron. Mat. 24, 379 (1995).Google Scholar
9. Kronik, L. et al, Appl. Phys. Lett. 67, 1405 (1995).Google Scholar
10. Aigouy, L. et al, Solid State Comm. 102, 877 (1997).Google Scholar
11. Aigouy, L. et al, Proc. 4th Int. Symp. Quantum Confinement Nanoscale Materials, Devices, and Systems. ed. by Cahay, M., Leburton, J.P., Lockwood, D.J., and Bandyopadhyay, S., Electrochemical Society Proc. vol.97–11 (Electrochemical Society, Pennington, 1997) p. 146.Google Scholar
12. Pollak, F.H. et al, IEEE Journal of Selected Topics in Quantum Electronics: Applied Optical Diagnostics of Semiconductors, 1, 1002 (1995).Google Scholar
13. Ashkenasy, N. et al to be published in J. Appl. Phys.Google Scholar
14. Yin, X. et al, Appl. Phys. Lett. 60, 1336 (1992).Google Scholar
15. Warren, A.C. et al, J. Vac. Sci. Technol. B 10, 1904 (1992).Google Scholar
16. Acosta-Ortiz, S.E. and Lastraz-Martinez, A., Phys. Rev. B 40, 1426 (1989); T. Holden et al, Appl. Phys. Lett. 70, 1107 (1997).Google Scholar
17. Herman, M.H., Proc. of the Society of Photo-optic Instrumentation Engineers, ed. Pollak, F.H., Cardona, M. and Aspnes, D.E. (SPIE, Bellingham, 1990), Vol. 1286, p. 39 Google Scholar
18. Zhang, X.C. et al, Appl. Phys. Lett. 56, 2228 (1990).Google Scholar
19. Yuan, C. et al, J. Vac. Sci. Technol. B 13, 2075 (1995).Google Scholar
20. Schurman, M. et al, Mat. Sci. & Eng. B 43, 222 (1997).Google Scholar
21. Li, C.F. et al, Phys. Rev. B 55, 9251 (1997).Google Scholar
22. Shan, W. et al, Appl. Phys. Lett. 66, 985 (1995).Google Scholar
23. Shan, W. et al, Appl. Phys. Lett. 69, 3315 (1996).Google Scholar
24. Logothetidis, S. et al, Phys. Rev. B 50, 18017 (1994).Google Scholar