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Non-Destructive and Whole Wafer Characterization of III-V Infrared Epitaxial Materials Prepared by Turbo Disk Metalorganic Chemical Vapor Deposition

  • Z. C. Feng (a1), M. Pelczynski (a1), C. Beckham (a1), P. Cooke (a1), I. Ferguson (a1) and R. A. Stall (a1)...

Abstract

Multiple wafer growth of infrared III-V semiconductor materials of InSb and InGaAsP have been produced by metalorganic chemical vapor deposition technology employing a vertical reactor growth configuration with a high speed rotating disk. Three measurement techniques of sheet resistivity, Fourier transform infrared (FTIR) reflectance and photoluminescence have been used to characterize epitaxial films on wafers up to 4″ diameter. Mapping distributions of the film thickness, sheet resistivity, surface morphology, and PL peak wavelength with uniformities better than 1% are illustrated. Data from our 2900 runs are produced. Variations of the characteristic features of the film with the growth conditions are discussed. These whole wafer and non-destructive material characterization techniques tightly coupled with the epitaxial processes are necessary to realize the high quality and high uniformity growth of state-of-art materials in a production environment.

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1. Manasreh, M. O., Myers, T. H. and Julien, F. H. ed., Infrared Applications of Semiconductors-Materials, Processing and Devices, Mat. Res. Soc. Symp. Proc. Vol.450, Materials Research Society (1997).
2. Razeghi, M. ed., Long Wavelength Infrared Detectors, in book series of Optoelectronic Properties of Semiconductors and Superlattices, Vol. 1, series ed. Mansreh, M. O., Gordon & Breach Press (1996).
3. Turner, G. W., Choi, H. K., Manfra, M. J. and Connors, M. K., in [1], p. 3.
4. Razeghi, M., Diaz, J., Yi, H.J., Wu, D., Lane, B., Rybaltowski, A., Xiao, Y., Jeon, H., in [1], p. 13.
5. Holmes, D. E. and Kamath, G. S., J. Electron. Mater. 9, 95 (1980).
6. McKee, M. A., Norris, P. E., Stall, R. A., Tompa, G. S., Chem, C. S., Noh, N., Kang, S. S. and Jasinski, T. J., J. Crystal Growth 107, 445 (1991).
7. McKee, M. A., Yoo, B.-S. and Stall, R. A., J. Crystal Growth 124, 286 (1992).
8. Thompson, A.G., Stall, R.A., Gurary, A.I. and Ferguson, I., Inst. Phys. Conf. Ser. No. 155, 881 (1996).
9. Feng, Z. C., Beckham, C., Schumaker, P., Ferguson, I., Stall, R. A., Schumaker, N., Povloski, M. and Whitley, A., in Infrared Applications of Semiconductors – Materials, Processing, and Devices, Mat. Res. Soc. Symp. Proc. Vol.450, ed. Julien, F., Myers, T. and Manasreh, M., MRS, Pittsburgh, pp. 6166 (1997).
10. Ferguson, I., Tran, C.A., Karlicek, R.F., Feng, Z.C., Stall, R.A., Laing, S., Cai, W., Li, Y., Liu, Y. and Lu, Y., in Photodetectors: Materials and Devices II, Proceedings of SPIE, Vol.2999, ed. Brown, G.J. & Razeghi, M., pp. 298305 (1997).
11. Woelk, E., Jurgensen, H., Rolph, R. and Zielinski, T., J. Electron. Mater. 24, 1715 (1995).
12. Yoo, B.-S., McKee, M. A., Kim, S.-G. and Lee, E.-H., Solid State Commun. 88, 447 (1993).
13. Li, K., Wee, A.T.S., Lin, J., Tan, K.L., Zhou, L., Li, S.F.Y., Feng, Z C., Chou, H.C., Kamra, S. & Rohatgi, A., J. Materials Science: Materials in Electronics 8, 125132 (1997).
14. Nelson, A.W., Spurdens, P.C., Cole, S., Walling, R.H., Wong, S., Harding, M.J., Cooper, D.M., Devlin, W.J. and Robertson, M. J., J. Crystal Growth 93, 792 (1988).
15. McKee, M.A., Yoo, B.-S. and Stall, R.A., Proc. 4th Intl. Conf. On InP and Related Materials, p.151 (1992).
16. Mori, K., Takemi, M., Takiguchi, T., Goto, K., Nishimura, T., Kimura, T., Mihashi, Y. and Murotani, T., Proc. 5th Intl. Conf. On InP and Related Materials, p.235 (1993).
17. Jordan, A.S., J. Electron. Mat. 24, 1649 (1995).
18. Lum, R.M., McDonald, M.L., Mack, E.M., Williams, M.D., Storz, F.G. and Levkoff, J., J. Electron. Mat. 24, 1577 (1995).

Non-Destructive and Whole Wafer Characterization of III-V Infrared Epitaxial Materials Prepared by Turbo Disk Metalorganic Chemical Vapor Deposition

  • Z. C. Feng (a1), M. Pelczynski (a1), C. Beckham (a1), P. Cooke (a1), I. Ferguson (a1) and R. A. Stall (a1)...

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