Skip to main content Accessibility help
×
Home

Noncrucial Role of the Defects in the Splitting for Hydrogen Implanted Silicon With High Boron Concentration

  • V.P. Popov (a1), V.F. Stas (a1) and I.V. Antonova (a2)

Abstract

The present work deals with the investigation of the electrical and structural properties of heavily boron-doped silicon irradiated by hydrogen. Blistering and splitting processes are enhanced with an increase in boron concentration in the crystal. The measured values of perpendicular strain are over 0.7% which corresponds to a gas overpressure of 0.5 GPa. Processes which lead to blistering and splitting is better described in the frame of a gas pressure model than a model of local stress caused by the defects.

Copyright

References

Hide All
[1] Bruel, M.. Electron. Lett. 31, 1201 (1995).
[2] Holbech, J.D., Nielsen, B.B., Jones, R.J., Sitch, P., Obergg, S.. Phys.Rev.Lett., 71, 875 (1993).
[3] Cerofolini, G.F., Meda, L., and Volpones, C.. J.Appl. Phys. 63, 4911 (1997).
[4] Tuttle, B. and Adams, J.B.. Phys. Rev. B, 56, 4565 (1998).
[5] Muto, S., Takeda, S., Hirata, M., Mater. Sci. Forum. 143–7, 897 (1994).
[6] Popov, V.P., Stas, V.F.. Abstracts of European Material Research Society, June 16-19, A–8 (1998)
[7] Hwang, Ki-Hyun, Park, Jin-Won, Yoon, Euijoon, Whang, Ki-Woong, and Lee, Jeong Yong. Journ. Appl.Phys. 82, 74 (1997).
[8] Evans, J. H., J. Nucl. Mater. 68, 129 (1977).
[9] Weldon, M. K., Marsico, V. E., Chabal, Y. J., Agarwal, A., Eaglesham, D. J., Sapjeta, J., Brown, W. L., Jacobson, D. C., Caudano, Y., Christman, S. B., Chaban, E. E.. Journ. Vac. Scie. & Technol. B15, 1065-1073 (1997).
[10] Scherzer, B. M. U., in Sputtering By Particle Bombardment It, Topics in Applied Physics, edited by Behrisch, R. (Springer, New York), 52, 271 (1987).
[11] Lee, T.-H., Tong, Q.-Y., Chao, Y.-L., Huang, L.-J., and Goesele, U.. Electrochem. Soc. Proc., 97–23, 2732 (1997).
[12] Tong, Q.-Y., Scholz, R., Goesele, U. Lee, T.-H., Huang, L.-J., Chao, Y.-L., and Tan, T.Y.. Appl. Phys.Lett, 72, 49 (1998).
[13] Dvurechenskii, A.V., Groetzshel, R., Popov, V.P.. Phys.Lett., A116, 399 (1986)
[14] Tong, Q.-Y., Scholz, R., Goesele, U. Lee, T.-H., Huang, L.-J., Chao, Y.-L., and Tan, T.Y. VIII International Symposium on Silicon Materials Science and Technology, San Diego, 1998.

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed