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Noncrucial Role of the Defects in the Splitting for Hydrogen Implanted Silicon With High Boron Concentration

  • V.P. Popov (a1), V.F. Stas (a1) and I.V. Antonova (a2)


The present work deals with the investigation of the electrical and structural properties of heavily boron-doped silicon irradiated by hydrogen. Blistering and splitting processes are enhanced with an increase in boron concentration in the crystal. The measured values of perpendicular strain are over 0.7% which corresponds to a gas overpressure of 0.5 GPa. Processes which lead to blistering and splitting is better described in the frame of a gas pressure model than a model of local stress caused by the defects.



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