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Noncrucial Role of the Defects in the Splitting for Hydrogen Implanted Silicon With High Boron Concentration

Published online by Cambridge University Press:  15 February 2011

V.P. Popov ,
V.F. Stas  and
I.V. Antonova
V.P. Popov
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia, popov@isp.nsc.ru
V.F. Stas
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia, popov@isp.nsc.ru
I.V. Antonova
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
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Abstract

The present work deals with the investigation of the electrical and structural properties of heavily boron-doped silicon irradiated by hydrogen. Blistering and splitting processes are enhanced with an increase in boron concentration in the crystal. The measured values of perpendicular strain are over 0.7% which corresponds to a gas overpressure of 0.5 GPa. Processes which lead to blistering and splitting is better described in the frame of a gas pressure model than a model of local stress caused by the defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 109
Copyright
Copyright © Materials Research Society 1999

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