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Non-Contact, Wafer-Scale Deep Level Transient Spectroscopy (DLTS) Based on Surface Photovoltage (SPV)

Published online by Cambridge University Press:  26 February 2011

Jacek Lagowski ,
Andrzej Morawski  and
Piotr Edelman
Jacek Lagowski
Affiliation:
Center for Microelectronics Research at theUniversity of South Florida, 4202 Fowler Avenue, Tampa, FL 33620 and Semiconductor Diagnostics, Inc., 6604 Harney Road, Tampa, FL 33610
Andrzej Morawski
Affiliation:
Center for Microelectronics Research at theUniversity of South Florida, 4202 Fowler Avenue, Tampa, FL 33620 and Semiconductor Diagnostics, Inc., 6604 Harney Road, Tampa, FL 33610
Piotr Edelman
Affiliation:
Center for Microelectronics Research at theUniversity of South Florida, 4202 Fowler Avenue, Tampa, FL 33620 and Semiconductor Diagnostics, Inc., 6604 Harney Road, Tampa, FL 33610
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Abstract

We present a new version of a deep level transient spectroscopy which is suitable for non-contact, non-destructive determination of deep level defects in semiconductor wafers without preparation of metal-semiconductor diodes or p-n junctions.

The method relies on deep level thermal emission measurements by the surface photovoltage (SPV) transient following an optical filling pulse. Non-equilibrium occupation of deep levels is realized within the native surface depletion region by the capture of excess minority carriers. Since the native Schottky-type surface barrier is commonly present on semiconductor surfaces, the approach requires no wafer pre-treatments. Non-contact SPV measurements are realized using a capacitive coupling to the wafer front and the wafer back.

The quantitative principles of the SPV-DLTS approach are discussed using experimental data obtained on GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 129
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Lang, D. V., J. Appl. Phys., 45, 3023 (1974).Google Scholar
2. Schroder, D. K., Semiconductor Material and Device Characterization, (John Wiley & Sons, Inc., New York, 1990), chapter 7.6.Google Scholar
3. Fujisaki, Y., Takano, Y. and Ishiba, T., Semi-Insulating III-V Materials, edited by Kukimoto, H. and Magarawa, S. (OHMSHA Ltd., Tokyo, Japan 1986), p. 163.Google Scholar
4. Nolte, D. D. and Glass, A. M., Semi-Insulating III-V Materials, edited by Milnes, A. G. and Miner, C. J. (Adam Higler, New York 1990), p. 317.Google Scholar
5. Goodman, A. M., J. Appl. Phys., 32, 2550 (1961).CrossRefGoogle Scholar
6. Lagowski, J., Edelman, P. and Morawski, A., Semiconductor Science and Technology, January 1992, in press.Google Scholar
7. Lagowski, J., Balestra, C. and Gatos, H. C., Surf. Sci., 29, 203 (1972).CrossRefGoogle Scholar
8. Lagowski, J., Lin, D. G., Chen, T. -P., Skowronski, M. and Gatos, H. C., Appl. Phys. Lett., U7, 929 (1985).Google Scholar
9. Lagowski, J., Edelman, P., Dexter, M. and Henley, W., Semiconductor Science and Technology, January 1992, in press.Google Scholar