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Non-Contact, Wafer-Scale Deep Level Transient Spectroscopy (DLTS) Based on Surface Photovoltage (SPV)

Published online by Cambridge University Press:  26 February 2011

Jacek Lagowski ,
Andrzej Morawski  and
Piotr Edelman
Jacek Lagowski
Affiliation:
Center for Microelectronics Research at theUniversity of South Florida, 4202 Fowler Avenue, Tampa, FL 33620 and Semiconductor Diagnostics, Inc., 6604 Harney Road, Tampa, FL 33610
Andrzej Morawski
Affiliation:
Center for Microelectronics Research at theUniversity of South Florida, 4202 Fowler Avenue, Tampa, FL 33620 and Semiconductor Diagnostics, Inc., 6604 Harney Road, Tampa, FL 33610
Piotr Edelman
Affiliation:
Center for Microelectronics Research at theUniversity of South Florida, 4202 Fowler Avenue, Tampa, FL 33620 and Semiconductor Diagnostics, Inc., 6604 Harney Road, Tampa, FL 33610
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Abstract

We present a new version of a deep level transient spectroscopy which is suitable for non-contact, non-destructive determination of deep level defects in semiconductor wafers without preparation of metal-semiconductor diodes or p-n junctions.

The method relies on deep level thermal emission measurements by the surface photovoltage (SPV) transient following an optical filling pulse. Non-equilibrium occupation of deep levels is realized within the native surface depletion region by the capture of excess minority carriers. Since the native Schottky-type surface barrier is commonly present on semiconductor surfaces, the approach requires no wafer pre-treatments. Non-contact SPV measurements are realized using a capacitive coupling to the wafer front and the wafer back.

The quantitative principles of the SPV-DLTS approach are discussed using experimental data obtained on GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 129
Copyright
Copyright © Materials Research Society 1992

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References

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