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Nitrogen Profile Engineering for Tunnel Oxynitrides

Published online by Cambridge University Press:  10 February 2011

Taro Sugizaki ,
Yoko Tada ,
Ken-Ichi Hikazutani ,
Toshiro Nakanishi  and
Kanetake Takasaki
Taro Sugizaki
Affiliation:
Fujitsu Limited, 1500 Mizono, Tado-cho, Kuwana-gun, Mie 511-0192
Yoko Tada
Affiliation:
Fujitsu Limited, 1500 Mizono, Tado-cho, Kuwana-gun, Mie 511-0192
Ken-Ichi Hikazutani
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
Toshiro Nakanishi
Affiliation:
Fujitsu Limited, 1500 Mizono, Tado-cho, Kuwana-gun, Mie 511-0192
Kanetake Takasaki
Affiliation:
Fujitsu Limited, 1500 Mizono, Tado-cho, Kuwana-gun, Mie 511-0192
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Abstract

We consider nitrogen profiling in oxynitrides to be the key technology for next generation Flash Memories, because of its ability to suppress the generation of traps in tunnel oxides. We are trying to develop an oxynitriding technique for tunnel oxides that uses nitric monooxide. This time, we tried to control nitrogen profile in oxynitrides by using reoxidized oxynitride process. By using a three- step oxidationoxynitridation-reoxidation process, we attempted to systematically tune oxidation conditions, to obtain a satisfactory tunnel oxide/Si interface and SILC characteristics. Highly reliable tunnel oxide for flash memory has been achieved using recently developed reoxidized oxynitrides processing, which is characterized by wet oxidationoxynitridation-dry oxidation. This process yields excellent characteristics, such as low oxide trap formation, low leakage current, and high charge to breakdown (Qbd). This three-step oxynitride process is best suited for flash memories having superior Program/Erase (P/E) cycling endurance and data retention characteristics. In addition, I will propose the optimum conditions for the reoxidation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 207
Copyright
Copyright © Materials Research Society 1999

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References

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