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Nitrogen Distribution and Oxidation of HfOxNy Gate Dielectrics Deposited by MOCVD using [(C2H5)2N]4Hf with NO and O2

Published online by Cambridge University Press:  28 July 2011

Minsoo Lee ,
Dolf Landheer ,
Xiaohua Wu ,
Martin Couillard ,
Zhenghong Lu ,
Wai T. Ng ,
Jianhao Chen ,
Tiensheng Chao  and
Tanfu Lei
Minsoo Lee
Affiliation:
Department of Materials Science and Engineering, University of Toronto, Toronto, ON, Canada M5S 3E4
Dolf Landheer
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, ON, Canada K1A 0R6
Xiaohua Wu
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, ON, Canada K1A 0R6
Martin Couillard
Affiliation:
Brockhouse Institute for Materials Research, McMaster University, Hamilton, ON, Canada L8S 4L7
Zhenghong Lu
Affiliation:
Department of Materials Science and Engineering, University of Toronto, Toronto, ON, Canada M5S 3E4
Wai T. Ng
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON, Canada M5S 3G4
Jianhao Chen
Affiliation:
Department of Electronics Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan
Tiensheng Chao
Affiliation:
Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan
Tanfu Lei
Affiliation:
Department of Electronics Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan
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Abstract

Ultra-thin HfOxNy gate dielectric films were deposited by pulse-mode metalorganic chemical vapor deposition (MOCVD) with [(C2H5)2N]4Hf (TDEAH) and either NO or O2 as oxidants. Nitrogen incorporation was studied by x-ray photoelectron spectroscopy (XPS) and spatially-resolved elemental profiles were obtained by scanning transmission electron microscopy (STEM) coupled with electron energy loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDS). The results indicate that nitrogen is incorporated throughout the high-k film with a higher concentration in the interface layer between the deposited layer and the Si(100) substrate. The concentration of nitrogen is increased in both layers by using NO instead of O2 as the oxidant. The N in the deposited and interface layers can be replaced by oxygen during oxygen ambient annealing at temperatures above 500 °C. Films with 8 at.% nitrogen remain amorphous following vacuum annealing at temperatures up to 800 °C. By encapsulating vacuum-annealed films with amorphous Si from an e-beam evaporator prior to removal from the cluster tool, it was possible to reduce the thickness of the interface layer upon air exposure to the 0.5 nm range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D7.2
Copyright
Copyright © Materials Research Society 2004

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References

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