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Nitride and Oxide Based Nanowires Grown by Plasma-Assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Chito E Kendrick
Affiliation:
chito.kendrick@elec.canterbury.ac.nz, The MacDiarmid Institute, Electrical and Computer Engineering, Electrical and Computer Engineering, University of Canterbury, Private Bag 4800, Christchurch, n.a., 8004, New Zealand, +64 3 364 2867 ext 7140, +64 3 364 2761
Damian Carder
Affiliation:
damien.carder@canterbury.ac.nz, University of Canterbury, Physics and Astronomy, Christchurch, n/a, 8004, New Zealand
Pual Miller
Affiliation:
pmi18@Student.canterbury.ac.nz, University of Canterbury, Physics and Astronomy, Christchurch, n/a, 8004, New Zealand
Roger J. Reeves
Affiliation:
r.reeves@phys.canterbury.ac.nz, University of Canterbury, Physics and Astronomy, Christchurch, n/a, 8004, New Zealand
Richard Tilley
Affiliation:
richard.tilley@vuw.ac.nz, Victoria University of Wellington, School of Chemical and Physical Sciences, Wellington, n/a, 8001, New Zealand
Steven M. Durbin
Affiliation:
s.durbin@elec.canterbury.ac.nz, University of Canterbury, Electrical and Computer Engineering, Christchurch, n/a, 8004, New Zealand
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Abstract

The growth of nanostructured material continues to attract attention for a number of applications, including highly sensitive gas sensors (due to the increased surface area), and photonic crystals (which require arrays of nanostructures). Even though nanostructures can be formed through self-assembly, they often do not possess the high crystal quality of those grown using vapour liquid solid (VLS) techniques; also, with VLS the feature size and placement can be easily controlled. To achieve VLS growth, however, several parameters have to be considered specific to the material of interest. In this study, we examine VLS growth of both InN (infrared) and ZnO (ultraviolet) nanostructures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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