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Nickel Related Absorption Lines in High-Pressure Synthetic Diamond

Published online by Cambridge University Press:  21 February 2011

M. H. Nazaré ,
J. C. Lopes  and
H. Kanda
M. H. Nazaré
Affiliation:
Departamento de Física, Universidade de Aveiro, 3800 Aveiro, Portugal
J. C. Lopes
Affiliation:
Departamento de Física, Universidade de Aveiro, 3800 Aveiro, Portugal
H. Kanda
Affiliation:
National Institute for Research in Inorganic Materials, Namiki 1–1, Tsukuba, Japan
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Abstract

Diamonds grown by the temperature gradient method using a nickel catalyst show an optical absorption band, extending from 2.5 eV to 2.56 eV, with a zero-phonon line at 2.51 eV. At 4 K this line exhibits fine structure; it is made up of 3 components at 2.509 eV, 2.510 eV and 2.511 eV. In absorption the fine structure components have the same relative intensity at different temperatures. We report on the effects of uniaxial stress on the zero-phonon transition at 77 K. We propose an interpretation of the results according to which the optical defect has a tetrahedral symmetry, and the 2.51 eV line occurs between two T2 states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 625
Copyright
Copyright © Materials Research Society 1994

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References

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