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New Types of Electrophotographic Photoreceptors Using Photosensitive a-SiC:H and a-Si:H

Published online by Cambridge University Press:  26 February 2011

Y. Nakayama ,
S. Akita ,
H. Takemura ,
K. Wakita  and
T. Kawamura
Y. Nakayama
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi Sakai, Osaka 591, JAPAN
S. Akita
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi Sakai, Osaka 591, JAPAN
H. Takemura
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi Sakai, Osaka 591, JAPAN
K. Wakita
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi Sakai, Osaka 591, JAPAN
T. Kawamura
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi Sakai, Osaka 591, JAPAN
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Abstract

New types of multilayered photoreceptors using photosensitive a-SiC:H and a-Si:H have been investigated. The a-Si1-xCx:H was deposited at high rate of 1–6 µm/h from SiH4-C2H2 by a plasma CVD and used as a carrier generation layer (CGL) or a carrier transport layer (CTL). The type with the a-SiC:H(x=0.1) as CGL for positive charging shows higher sensitivity at λ<700 nm than the a-Si:H photoreceptors, reflecting the higher photosensitivity and wider band gap of the a-SiC:H. Furthermore, the negative charging type using the a-SiC:H(x=0.1) as CTL shows excellent sensitivity over full visible rangq compared with other positive charging types, because the transport ability of electron is superior to that of hole in both a-Si:H and a-SiC:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 423
Copyright
Copyright © Materials Research Society 1988

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References

Refrences

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