No CrossRef data available.
Article contents
New Type of ir Photodectors Based on Lead Telluride and Related Alloys
Published online by Cambridge University Press: 10 February 2011
Abstract
Doping of the lead telluride and related alloys with the group III impurities results in an appearance of the unique physical features of a material, such as such as persistent photoresponse, enhanced responsive quantum efficiency (up to 100 photoelectrons/incident photon), radiation hardness and many others. We review the physical principles of operation of the photodetecting devices based on the group ifi-doped IV-VI including the possibilities of a fast quenching of the persistent photoresponse, construction of the focal-plane array, new readout technique, and others. The advantages of infrared photodetecting systems based on the group IIIdoped IV-VI in comparison with the modem photodetectors are summarized.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1998