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New Type of ir Photodectors Based on Lead Telluride and Related Alloys

Published online by Cambridge University Press:  10 February 2011

D. R. Khokhlov
D. R. Khokhlov*
Affiliation:
Physics Department, Moscow State University, Moscow 119899, Russia, khokhlov@mig.phys.msu.su
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Abstract

Doping of the lead telluride and related alloys with the group III impurities results in an appearance of the unique physical features of a material, such as such as persistent photoresponse, enhanced responsive quantum efficiency (up to 100 photoelectrons/incident photon), radiation hardness and many others. We review the physical principles of operation of the photodetecting devices based on the group ifi-doped IV-VI including the possibilities of a fast quenching of the persistent photoresponse, construction of the focal-plane array, new readout technique, and others. The advantages of infrared photodetecting systems based on the group IIIdoped IV-VI in comparison with the modem photodetectors are summarized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 295
Copyright
Copyright © Materials Research Society 1998

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