Skip to main content Accessibility help
×
Home

A New, Real-Time Method for Measuring Mobile Charge and Injected Charge in SiO2 on Si

  • P. Edelman (a1), J. Lagowski (a2), A. Savchouk (a2), A. Hoff (a2), L. Jastrzebski (a2) and E. Persson (a3)...

Abstract

We present a new approach to measuring mobile charge in SiO2 without MOS test structures. The measurement is done in non-contact mode and offers a whole-wafer mapping capability of the mobile charge in single minutes. Determination of the mobile charge is based on monitoring the ion drift by measuring corresponding changes in the oxide voltage. The drift is induced on the whole wafer by corona charge deposited on SiO2 followed by 200°C annealing. Surface contamination is distinguished from bulk contamination by selecting the appropriate sequence of the corona-temperature-stress, which injects ions from the surface into the SiO2.

Copyright

References

Hide All
[1] Edelman, P.; SPIE, Vol. 2337; 154 (1994).
[2] Edelman, P., et al. ; Proc. of DRIP VI; Colorado, 1995, in press.
[3] Schroder, D.K.; SemiconductorMaterial and Device Characterization; John Wiley & Sons, Inc., New York; 1990; Chapter 6.2.5 and references therein.
[4] Woods, M.H. and Williams, R.; J. Appl. Phys. Lett.; 44, 5506 (1973).
[5] Tada, Y. and Tomizawa, Y.; Jpn. J. Appl. Phys. Lett.; 34; 643 (1995).
[6] Edelman, P., et al. ; MRS Symposium Proceedings; 261, 223 (1992).

A New, Real-Time Method for Measuring Mobile Charge and Injected Charge in SiO2 on Si

  • P. Edelman (a1), J. Lagowski (a2), A. Savchouk (a2), A. Hoff (a2), L. Jastrzebski (a2) and E. Persson (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed