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A New Quantitative Roughness Measurement and its Application in the Polysilicon/Silicon Dioxide Interface

  • Su-Heng Lin (a1) and Miltiadis K. Hatalis (a1)

Abstract

A quantitative approach for characterizing the interface roughness between two materials by cross sectional transmission electron microscopy (XTEM) is proposed. This approach is based on obtaining an interface height distribution curve (IHDC). The interface roughness can be characterized quantitatively by extracting from IHDC three parameters: the mean, median and maximum interface height. This new method has been applied in the characterization of the interface between thermally grown silicon dioxide and polycrystalline silicon thin films deposited by low pressure chemical vapor deposition. It is shown that high temperature processing yields an interface that has higher roughness.

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References

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