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A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates

  • François Templier (a1), Nicolas Daval (a2), Léa Di Cioccio (a1), Daniel Bourgeat (a1), Fabrice Letertre (a2), Dominique Planson (a3), Jean-Pierre Chante (a2) and Thierry Billon (a1)...

Abstract

Feasibility of 4H-SiC epitaxy on SiCOI substrates has been demonstrated, with high quality of obtained layers. Power Schottky diodes were designed and fabricated on these new structures, and exhibited very interesting electrical performance, particularly in reverse mode, with Vbr ∼ 1000 V. This technology is very promising for the realization of monolithic SiC power systems.

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A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates

  • François Templier (a1), Nicolas Daval (a2), Léa Di Cioccio (a1), Daniel Bourgeat (a1), Fabrice Letertre (a2), Dominique Planson (a3), Jean-Pierre Chante (a2) and Thierry Billon (a1)...

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