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New Phosphorus Oxygen Hole Center in Γ-Irradiated SiO2:P2O5 Optical Fiber

Published online by Cambridge University Press:  25 February 2011

H. Kawazoe
Affiliation:
Tokyo Institute of Technology, Dept. of Inorganic Materials, Ookayama, Meguro-ku, Tokyo 152, Japan
M. Kohketsu
Affiliation:
Tokyo Institute of Technology, Dept. of Inorganic Materials, Ookayama, Meguro-ku, Tokyo 152, Japan
Y. Watanabe
Affiliation:
Tokyo Institute of Technology, Dept. of Inorganic Materials, Ookayama, Meguro-ku, Tokyo 152, Japan
K. Shibuya
Affiliation:
Showa Electric Wire and Cable Co., Ltd., Minamihashimoto, Sagamiharashi 229, Japan
K. Muta
Affiliation:
Showa Electric Wire and Cable Co., Ltd., Minamihashimoto, Sagamiharashi 229, Japan
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Abstract

The formation of paramagnetic centers upon γ-irradiation was examined for the silica based waveguides doped with P2O5 by using ESR and optical absorption. The centers inherent in SiO2 glasses such as Si-E′ and OHC were found to be replaced with P-related centers such as phosphorus oxygen hole centers and phosphorus electron center by introducing a small amount of P2O5. New type of POHC was detected especially in the glass with [P2O5] of 1.3 mol % at 77K, which was assumed to be a precursor of the POHC stable at room temperature. The correlation between γ-induced loss-increase and the formation of these defects was examined.

Type
Articles
Copyright
Copyright © Materials Research Society 1986

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