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A New Model for the Poly-Silicon thin Film Transistor for Use with Spice
Published online by Cambridge University Press: 21 February 2011
Abstract
A set of analytical equations that accurately model the large-signal current-voltage and charge-storage characteristics of the poly-silicon thin film transistor (TFT) have been developed. The model is based on theories of conduction in materials with a bulkdistribution of gap states[l]. The equations are suitable for incorporation into a circuit simulator capable of transient-analysis of circuits, such as SPICE.
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- Copyright © Materials Research Society 1990