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New Method to Determine the a-Si:H Pin Diode Series Resistance by Noise Measurements

Published online by Cambridge University Press:  10 February 2011

F. Blecher ,
K. Seibel ,
M. Hillebrand  and
M. Böhm
F. Blecher
Affiliation:
Institut für Halbleiterelektronik (IHE), Universität-GH Siegen, D-57068 Siegen, Germany
K. Seibel
Affiliation:
Institut für Halbleiterelektronik (IHE), Universität-GH Siegen, D-57068 Siegen, Germany
M. Hillebrand
Affiliation:
Institut für Halbleiterelektronik (IHE), Universität-GH Siegen, D-57068 Siegen, Germany
M. Böhm
Affiliation:
Institut für Halbleiterelektronik (IHE), Universität-GH Siegen, D-57068 Siegen, Germany
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Abstract

The series resistance limits the linearity of photodiodes and decreases the efficiency of solar cells. It is usually determined from IV-measurements for moderate and high forward current density. This method, however, provides only partial information about Rs, since the series resistance depends on the operating point. An alternative method is based on noise measurements. System noise of the measuring system with a low-noise current-voltage converter has been investigated. A new method for extraction of photodiode series resistance from noise measurements is suggested. Noise measurements are carried out for a-Si:H pin diodes. The series resistance of an amorphous pin diode has been extracted for different operating conditions using the new measurement method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 169
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Böhm, M., Blecher, F., Eckhardt, A., Schneider, B., Seibel, K., Sterzel, J., Benthien, S., Keller, H., Lulé, T., Rieve, P., Sommer, M., Image Sensors in TFA(Thin Film on ASIC) Technology, to be published in Handbook on Computer Vision an Applications, Academic Press, Boston, 1998.Google Scholar
2 Böhm, M., Blecher, F., Eckhardt, A., Seibel, K., Schneider, B., Sterzel, J., Benthien, S., Keller, H., Lulé, T., Rieve, P., Sommer, M., Mat. Res. Soc. Spring Meeting, San Francisco, April 1998.Google Scholar
3 Schneider, B., Fischer, H., Benthien, S., Keller, H., Lulé, T., Rieve, P., Sommer, M., Schulte, J., Böhm, M., Technical Digest of International Electron Devices Meeting, pp. 209–212, 1997.Google Scholar
4 Wilson, A. D., Lyall, H., Applied Optics, Vol. 25, No. 24, p. 4530 (1986).Google Scholar
5 Boudry, J. M., Antonuk, L. E., Mat. Res. Soc. Proc. 297, p. 975 (1993).Google Scholar
6 Wieczorek, H., J. Appl. Phys. 77 (7), p. 3300 (1995).Google Scholar
7 Gho, G. et al., Mat. Res. Soc. Proc. 192, p. 393 (1990).Google Scholar