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A New Material: a-Si,Ge:H,F in a-Si,Ge:H,F/a-Si:H,F Multilayer Structures

Published online by Cambridge University Press:  26 February 2011

J. P. Conde ,
V. Chu ,
D. S. Shen ,
M. Angell  and
S. Wagner
J. P. Conde
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
V. Chu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
D. S. Shen
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
M. Angell
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
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Abstract

We present a detailed study of the electron transport parallel to the layers in a a-Si,Ge:H,F/a- Si:H,F amorphous semiconductor multilayers. The optical gap of the well layer is shifted from the bulk alloy due to quantum confinement. This shift W can be modeled using a finite barrier height, and electron effective masses for the barrier and for the well.

Multilayer-induced changes in σd and its activation energy Ea,d are completely determined by W. The photoconductivity σph, its temperature dependence (Eaph) and its dependence γ on carrier generation rate reflect a stretching of the conduction band tail near the band edge as the quantum shift W increases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 659
Copyright
Copyright © Materials Research Society 1988

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References

1. Miyahaki, S., lhara, Y. and Hirose, M., Phys. Rev. Lett., vol.59, p. 125, 1987.Google Scholar
2. Wronski, C.R., Persans, P.D. and Abeles, B., Appl. Phys. Lett., vol.49, p. 569, 1986.CrossRefGoogle Scholar
3. Hattori, K., Mori, T., Okamoto, H. and Hamakawa, v., Appl. Phys. Lett., vol.51, p. 1259, 1987.CrossRefGoogle Scholar
4. Shirai, H., Tanabe, A., Hanna, J., Oda, S., Nakamura, T. and Shimizu, i., Japn. J. of Appl. Phys., vol.25, p. L537, 1986.CrossRefGoogle Scholar
5. Conde, J.P., Aljishi, S., Shen, D.S., Angell, M. and Wagner, S., in J. of Non-Cryst. Solids, vol.97&98, p. 939, 1987.CrossRefGoogle Scholar
6. Abeles, B. and Tiedje, T., Phys. Rev. Lett., vol.51, p. 2003, 1983.CrossRefGoogle Scholar
7. Conde, J.P., Aljishi, S., Shen, D.S., Chu, V., Smith, Z E. and Wagner, S., in Mat. Red. Soc. Syrnp.Proc. Vol.95, ed. Hamakawa, Y. and Madan, A., p. 369, Materials Research Society, Pittsburgh, 1987.Google Scholar
8. Miyasaki, S., Ihara, Y. and Hirose, M., J. of Non.Cryst. Solids, vol.97&98, p. 887, 1987.CrossRefGoogle Scholar
9. Honma, I., Hotta, H., Kawai, K., Komiyama, H. and Tanaka, K., J. of Non-Cryet. Solids, vol.97&98, p. 947, 1987.CrossRefGoogle Scholar
10. Kolodsey, J., Aljishi, S., Schwars, R., Slobodin, D., and Wagner, S., Journal of Vacuum Science Tcohnology, vol. 4 (6), p. 2499, 1986.CrossRefGoogle Scholar
11. Aljishi, S., Smith, Z E., Slobodin, D., Kolodzey, J., Chu, V., Schwarz, R., and Wagner, S., in Mat. Res. Soc. Proc. Vol.70, ed. Adler, D., p. 181, Material Research Society, Pittsburgh, 1986.Google Scholar
12. Aljishi, S., Shen, D.S. Chu, V., Smith, Z E., Condo, J.P., Kolodrey, J., Slobodin, D. and Wagner, S., in Mat. Res. Sos. Soymp. Pros. Vol.95, ed. Hamakawa, Y. and Madan, A., Materials Research Society, Pittsburgh, 1987.Google Scholar
13. Aljishi, S., Chu, V., Smith, Z E., Shen, D.S., Conde, J.P., Kolodzey, J., Slobodin, D. and Wagner, S., in J. of Non.Cryst. Solids, p. 1023, Prague, 1087.Google Scholar
14. Evangelisti, F., J. of Non.Cryst. Solids, vol.77&78, p. 969, 1985.CrossRefGoogle Scholar
15. Gasiorowics, S., Qnuntum Phyesics, Wiley, New York, 1974.Google Scholar
16. Mott, N.F. and Davis, E.A., in Electronic Processes in Non.Crystalline Materials, Clarendon Press, Oxford, 1979.Google Scholar
17. Shen, D.S., Aljishi, S., Conde, J.P., Smith, Z E., Chu, V., and Wagner, S., in SPIE Conf. Pro,. Vol.768, Physics of Amorphous Semiconductor Devices, p. 17, 1987.Google Scholar
18. Shen, D.S., Aljishi, S., Smith, Z E., Conde, J.P., Chu, V., and Wagner, S., in Mat. Res. Soc. Sypnp. Pros. Vol.95, ed. Hamakawa, Y. and Madan, A., p. 55, Materials Research Society. Pittsburgh, 1987.Google Scholar
19. Rose, A., in Concepts in Photooenductivity and Allied Problems, Krieger, Huntington, New York, 1978.Google Scholar