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New Electronic Properties of Metal / III-V Compound Semiconductor Interfaces

  • L. J. Brillson (a1), R. E. Viturro (a1), S. Chang (a1), J. L. Shaw (a1), C. Mailhiot (a1), R. Zanoni (a2), Y. Hwu (a2), G. Margaritondo (a2), P. Kirchner (a3) and J. M. Woodall (a3)...

Abstract

Recent studies of interface states and band bending at metal / III-V compound semiconductor interfaces reveal that these junctions are much more controllable and predictable than commonly believed. Soft x-ray photoemission spectroscopy studies demonstrate a wide range of band bending for metals on many III-V compounds, including GaAs. Cathodoluminescence spectroscopy measurements show that discrete states form at the microscopic junction which can have a dominant effect on the band bending properties. Internal photoemission measurements confirm the bulk barrier heights inferred by photoemission methods. After separating out surface chemical and bulk crystal quality effects, one finds simple, predictive barrier height variations which follow classical Schottky behavior.

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New Electronic Properties of Metal / III-V Compound Semiconductor Interfaces

  • L. J. Brillson (a1), R. E. Viturro (a1), S. Chang (a1), J. L. Shaw (a1), C. Mailhiot (a1), R. Zanoni (a2), Y. Hwu (a2), G. Margaritondo (a2), P. Kirchner (a3) and J. M. Woodall (a3)...

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