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New Directions in the Growth of Epitaxial Insulators and Metals on Silicon

Published online by Cambridge University Press:  28 February 2011

Julia M. Phillips ,
J. L. Batstone  and
J. C. Hensel
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
J. L. Batstone
Affiliation:
Permanent Address: Dept. of Materials Science & Engineering, The University of Liverpool, P. 0. Box 147, Liverpool L69 3BX UK
J. C. Hensel
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
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Abstract

By nature of their high degree of crystalline perfection, epitaxial insulators and metals on semiconductors are structurally characterizable to a considerably greater extent than are polycrystalline or amorphous materials. This offers the possibility of correlating the detailed structure of these thin epitaxial films and their interfaces with their electrical properties. We have recently found evidence for the influence of the atomic structure of the CaF2/Si(ll1) interface on its electrical properties. Wehave also studied the structural and electrical properties of ultrathin epitaxial cobaltsilicide layers on Si(111).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 403
Copyright
Copyright © Materials Research Society 1988

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References

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