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A New Class of Solar Cells: Isomeric Boron Carbide Semiconductors with Fourth Quadrant Conductivity

Published online by Cambridge University Press:  01 February 2011

Ravi B. Billa ,
A. N. Caruso  and
J. I. Brand
Ravi B. Billa
Affiliation:
Department of Mechanical Engineering, University of Nebraska-Lincoln 245N WSEC, Lincoln, NE. 68588–0511 USA
A. N. Caruso
Affiliation:
Department of Physics, University of Nebraska-Lincoln 245N WSEC, Lincoln, NE. 68588–0511 USA
J. I. Brand*
Affiliation:
College of Engineering and Center for Materials Research and Analysis, University of Nebraska-Lincoln 245N WSEC, Lincoln, NE. 68588–0511 USA
*
* Author to whom correspondence should be addresed
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Abstract

Previously, we have made diodes[1,2] and transistors [3] as well as very effective realtime solid state neutron detectors [4] out of semiconducting boron carbide deposited on silicon or silicon carbide‥

In this work the recent fabrication of a new class of highly photosensitive boron carbide diodes is discussed. These diodes exploit the electronic behavior differences of the isomers of film precursors, the closo-dicarbododecaboranes. These differences were observed in photoemission and inverse photoemission studies where the HOMO-LUMO (highest occupied molecular orbital-lowest unoccupied molecular orbital) gap variations upon deposition varied strongly with the isomeric configuration. Based on these results, p-n junctions were formed by plasma enhanced chemical vapor of ortho and meta carborane, respectively, on both nickel and aluminum substrates. These diodes exhibit fourth-quadrant conductivity, making them exciting new photovoltaic conversion devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z3.10
Copyright
Copyright © Materials Research Society 2004

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References

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