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New buffer layer technique using underlying epitaxial AlN films for high-quality GaN growth

Published online by Cambridge University Press:  21 March 2011

Tomohiko Shibata ,
Yoshihiro Kida ,
Hideto Miyake ,
Kazumasa Hiramatsu ,
Keiichiro Asai ,
Teruyo Nagai ,
Shigeaki Sumiya ,
Mitsuhiro Tanaka  and
Osamu Oda
Tomohiko Shibata
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Yoshihiro Kida
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Hideto Miyake
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Kazumasa Hiramatsu
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Keiichiro Asai
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
Teruyo Nagai
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
Shigeaki Sumiya
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
Mitsuhiro Tanaka
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
Osamu Oda
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
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Abstract

We demonstrate high-quality epitaxial AlN films on C-plane sapphire as a new buffer layer technique for the growth of high-quality GaN. The obtained GaN films were atomically flat and the full width at half maximum (FWHM) values of the X-ray rocking curve (XRC) were 120arcsec and 510arcsec for (0004) and (10-10), respectively. XRC-FWHM values of the underlying AlN film were 90arcsec and 1800arcsec for (0004) and (10-10), respectively. The XRC results of the GaN indicated that tilted mosaicity of the GaN was much smaller than that of conventional GaN and that small tilted mosaicity coincided with small twisted mosaicity. It was characteristic that the twisted mosaicity drastically reduced from the AlN to the GaN. According to TEM results, it was clarified that the high-quality AlN layer had an effect in reducing the amount of screw-type threading dislocations and that the GaN/AlN interface played an important role in reducing the amount of edge-type dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.48.1
Copyright
Copyright © Materials Research Society 2002

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