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A New Approach to Growth of Bulk Zno Crystals for Wide Bandgap Applications

Published online by Cambridge University Press:  10 February 2011

G. Agarwal ,
J. E. Nause  and
D. N. Hill
G. Agarwal
Affiliation:
Cermet Inc., 1019 Collier Road, Suite C1 Atlanta GA 30318
J. E. Nause
Affiliation:
Cermet Inc., 1019 Collier Road, Suite C1 Atlanta GA 30318
D. N. Hill
Affiliation:
Georgia Institute of Technology, Atlanta, GA 30332
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Abstract

A novel technique was used to melt zinc oxide powder. This techniques involves the pressurized RF induction heating of ZnO, contained in a water-cooled crucible. The ability to obtain a pool of molten ZnO enables the pulling of large diameter ZnO crystals using conventional melt growth processes. Centimeter-sized crystals were obtained in the preliminary experiments by cooling the ZnO melt. These crystals were analyzed for crystalline perfection and stoichiometry using x-ray diffiraction and photoluminescence. The semiconductor properties of these crystals were also measured. This technology can potentially provide large, low cost ZnO single crystal wafers for use in the fabrication of GaN blue diodes and blue lasers, high temperature / high power FETs, as well as homoepitaxy of ZnO wide band-gap devices. Single crystal zinc oxide also has potential application in the piezoelectric device market.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 41
Copyright
Copyright © Materials Research Society 1998

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References

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