Skip to main content Accessibility help
×
Home

Neutral Impurity Disordering of III-V Quantum well Structures for Optoelectronic Integration

  • J. H. Marsh (a1), S. R. Andrew (a1), S. G. Ayling (a1), J. Beauvais (a1), S. A. Bradshaw (a1), A. C. Bryce (a1), S. I. Hansen (a1), R. M. De La Rue (a1) and R. W. Glew (a1)...

Abstract

The neutral impurities boron and fluorine have been studied as species for impurity induced disordering. In the GaAs/AlGaAs system fluorine disordered multiple quantum well waveguide structures exhibited blue shifts of up to 100 meV in the absorption edge (representing complete disordering) accompanied by substantial changes, > 1%, in the refractive index. The absorption coefficient in partially disordered structures at near band-edge wavelengths was as low as 4.7 dB cm−1. Integrated extended cavity lasers have been fabricated with low losses (19 ± 8.4 dB cm−1) in the passive waveguide. Disordering of GalnAs/AlGalnAs and GalnAs/GalnAsP quantum well structures lattice matched to InP has also been investigated. The temperature stability of as-grown phosphorus-quaternary material is poor, with blue shifts of the exciton peak occuring at temperatures greater than 500°C, but the aluminium-quaternary is stable to at least 650°C. Large blue shifts (up to 90 meV for phosphorus quaternary and 45 meV for aluminium quaternary samples) were observed in the fluorine-implanted samples. The estimated loss in fluorine-disordered phosphorus quaternary samples is typically around 8 dB cm“−1.

Copyright

References

Hide All
1. Deppe, D. G. and Holonyak, N. Jr:, J. Appl. Phys., 64, R93–R113 (1988).
2. Marsh, J. H., Hansen, S. I., Bryce, A. C. and De La Rue, R. M., Optical and Quantum Electronics 23, S941 (1991)
3. Suzuki, M., Tanaka, H., Akiba, S., Kushiro, Y., J. Lightwave Technol 6, 779 (1988).
4. O'Neill, M., Bryce, A. C., Marsh, J. H., De La Rue, R. M., Roberts, J. S. and Jeynes, C., Appl. Phys. Lett., 55, 1373 (1989).
5. O'Neill, M., Marsh, J. H., De La Rue, R. M., Roberts, J. S. and Gwilliam, R., Electron Lett, 26, 1613–5 (1990).
6. Thornton, R. L., Mosby, W. J. and Paoli, T. L., IEEE J. Lightwave Technol., LT–6, 786 (1987).
7. van der Ziel, J. P., llegems, M. and Mikulyak, R. M., Appl. Phys. Lett., 67, 735 (1976).
8. Hansen, S. I., Marsh, J. H., Roberts, J. S. and Gwilliam, R., Appl. Phys. Lett., 58, 13981400 (1991).
9. Hansen, S. I., Marsh, J. H. and Roberts, J. S., IEE Proceedings Part J, (to be published).
10. Pape, I. J., LI Kam Wa, P., David, J. P. R., Claxton, P. A. and Robson, P. N., Electron. Lett., 24, 12171218 (1988).
11. Pape, I. J., Li Kam Wa, P., Roberts, D. A., David, J. P. R., Claxton, P. A. and Robson, P. N., GaAs and Related Compounds 1988 (Inst Phys Conf Ser No 96) 397.
12. Razeghi, M., Archer, O. and Launay, F., Semicond. Sci. Technol., 2, 793 (1987).
13. Nakashima, K., Kawaguchi, Y., Kawamura, Y., Imamura, Y., Appl. Phys. Lett. 52, 13831385 (1988).
14. Pape, I. J., Li Kam Wa, P., David, J. P. R., Claxton, P. A., Robson, P. N. and Sykes, D., Electron. Lett., 24, 910911 (1988).
15. Bradley, M. A., Julien, F. H., Gilles, J. P., Gao, Y., Rao, E. V. K., Razeghi, M. and Omnes, F., Electron. Lett., 26, 209 (1990).
16. Tell, B., Johnson, B. C., Zyzkind, J. L., Brown, J. M., Sulhoff, J. W., Brown-Goebeler, K. F., Miller, B. I. and Koren, U., Appl. Phys. Lett., 52, 14281430 (1988).
17. Sumida, H., Asahi, H., Jae Yu, S., Asami, K., Gonda, S., H. Tanoue. Appl. Phys. Lett., 54, 520522 (1989).
18. Tell, B., Shah, J., Thomas, P. M., Brown-Goebeler, K. F., Giovanni, A. D., Miller, B. I. and Koren, U., Appl. Phys. Lett., 54, 1570 (1989).
19. Bryce, A. C., Marsh, J. H., Gwilliam, R. and Glew, R. W., IEE Proc Part J (Optoelectronics), 138, 8790 (1991).
20. Marsh, J. H., Bradshaw, S. A., Bryce, A. C., Gwilliam, R. and Glew, R. W., J. Electron. Mat., 20, 973978, 1991
21. Walker, R. G., Electron Lett, 21 (4), 208, 1857 (1988)
22. Dansas, P., J. Appl. Phys. 58 (1985) 2212.
23. Moore, W. J., Hawkins, R. L. and Shanabrook, B. V., Physica 146B (1987) 65.
24. Fischer, D. W. and Yu, P. W., J. Appl. Phys. 59 (1986) 1952
25. Makita, Y. and Gonda, S., Appl. Phys. Lett. 17 (1976) 333.
26. Tell, B. and Brown-Goebeler, K. F., J. Appl. Phys. 62 813 (1987).
27. Werner, J., Lee, T. P., Kapon, E., Colas, E., Stoffel, N. G., Schwarz, S. A., Schwarz, L. C. and Andreadakis, N. C., Appl. Phys. Lett., 57, 810 (1990).
28. Mcllroy, P. W. A., Kurobe, A. and Uematsu, Y., IEEE J Quantum Electron, QE–21, 1958 (1985).
29. Andrew, S. R., Marsh, J. H., Holland, M. C. and Kean, A. H., submitted to Photonics Tech. Lett.

Neutral Impurity Disordering of III-V Quantum well Structures for Optoelectronic Integration

  • J. H. Marsh (a1), S. R. Andrew (a1), S. G. Ayling (a1), J. Beauvais (a1), S. A. Bradshaw (a1), A. C. Bryce (a1), S. I. Hansen (a1), R. M. De La Rue (a1) and R. W. Glew (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed