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Neodymium-doped GaAs Light-emitting Diodes

Published online by Cambridge University Press:  10 February 2011

S. J. Chang*
Affiliation:
Department of Electrical Engineering National Cheng Kung University Tainan 70101, Taiwan, Republic of China, sjchang@ mail.ncku.edu.tw
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Extract

Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into a GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+4F3/2 state to the Nd3+4I9/2, 4I1/2, and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5 × 10−7.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

1) Takahei, K. and Taguchi, A., Mater. Sci. Forum 83–87, 641 (1992).Google Scholar
2) Ennen, H. and Schneider, J., J. Electron. Master. A 14, 115 (1985).Google Scholar
3) Kober, W., Weber, J., Hangleiter, A., Benz, K. W., Ennen, H., And Muller, D., J.Cryst. Growth 79, 741 (1986).Google Scholar
4) Takahei, K., Whitney, P. S., Nakagome, H., and Uwai, K., J. Appl. Phys. 65, 1257 (1989).Google Scholar
5) Masterov, V. F. and Zakhavronkov, L. F., Sov. Phys. Semicond. 24, 383 (1990).Google Scholar
6) Haydl, W. H., Muller, H. D., Ennen, H., Kober, W., and Benz, K. W., Appl. Phys. Lett. 46, 870 (1985).Google Scholar
7) Whitney, P., Uwai, K., Nakagome, H., and Takahei, K.. Lett. 24, 740 (1988).Google Scholar
8) Klein, P. B., Moore, F. G., and Dietrich, H. B., Electron. Lett. 26, 1299 (1990).Google Scholar
9) Galtier, P., Pocholle, J. P., Charasse, M. N., de Cremoax, B., Hirtz, J. P., Groussin, B., Benyattou, T., and Guillot, G., Appl. Phys. Lett. 55. 2105 (1989).Google Scholar
10) Wang, X. Z. and Wessels, B. W., Appl. Phys. Lett. 65, 584 (1994).Google Scholar
11) Wagner, J., Ennen, H., and Muller, H. D., J. Appl. Phys. 59, 1202 (1986).Google Scholar
12) Muller, H. D., Ennen, H., Schneider, J., and Axmann, A., J. Appl. Phys. 59, 2210 (1986).Google Scholar
13) Nakagome, H. and Takahei, K., Jpn. J. Appi. Phys. 28, L2098 (1989).Google Scholar
14) Taniguchi, M., Nakagome, H., and Takahei, K., J. Lumin. 52, 251 (1992).Google Scholar
15) Yamamoto, Y. and Kanbe, H., Jpn. J. Appl. Phys. 19, 121 (1980).Google Scholar