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Near-interface Traps in n-type SiO2/SiC MOS Capacitors from Energy-resolved CCDLTS

Published online by Cambridge University Press:  01 February 2011

Alberto F Basile ,
Sarit Dhar ,
John Rozen ,
Xudong Chen ,
John Williams ,
Leonard C. Feldman  and
Patricia M. Mooney
Alberto F Basile
Affiliation:
abasile@sfu.ca, Simon Fraser University, Physics, Burnaby, Canada
Sarit Dhar
Affiliation:
Sarit_Dhar@cree.com, Vanderbilt University, Physics and Astronomy, Nashville, Tennessee, United States
John Rozen
Affiliation:
john.rozen@Vanderbilt.Edu, Vanderbilt University, Physics and Astronomy, Nashville, Tennessee, United States
Xudong Chen
Affiliation:
chenxa1998@yahoo.com.hk, Simon Fraser University, Physics, Burnaby, Canada
John Williams
Affiliation:
williams@physics.auburn.edu, Auburn University, Physics, Auburn, Alabama, United States
Leonard C. Feldman
Affiliation:
l.c.feldman@rutgers.edu, Rutgers University, Physics and Astronomy, New Brunswick, New Jersey, United States
Patricia M. Mooney
Affiliation:
pmooney@sfu.ca, Simon Fraser University, Physics, Burnaby, Canada
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Abstract

Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.

Keywords

electrical propertiesoxidepassivation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B09-02
Copyright
Copyright © Materials Research Society 2010

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