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Near infrared intersubband absorption in cubic GaN/AlN superlattices

Published online by Cambridge University Press:  01 February 2011

Eric A. DeCuir Jr. ,
Emil Fred ,
Omar Manasreh ,
Jorg Schormann ,
Donat J. As  and
Klaus Lischka
Eric A. DeCuir Jr.
Affiliation:
edecuir@uark.edu, University of Arkansas, Electrical Engineering, 3217 Bell Engineering Center, Fayetteville, AR, 72701, United States, 479.575.5444, 470.575.7967
Emil Fred
Affiliation:
efred@uark.edu, University of Arkansas, Department of Electrical Engineering, 3217 Bell Engineering Center, Fayetteville, AR, 72701, United States
Omar Manasreh
Affiliation:
manasreh@uark.edu, University of Arkansas, Department of Electrical Engineering, 3217 Bell Engineering Center, Fayetteville, AR, 72701, United States
Jorg Schormann
Affiliation:
li_jsch@physik.upb.de, University of Paderborn, Department of Physics, Warburger Srasse 100, Paderborn, 33095, Germany
Donat J. As
Affiliation:
li_da@physik.uni-paderborn.de, University of Paderborn, Department of Physics, Warburger Srasse 100, Paderborn, 33095, Germany
Klaus Lischka
Affiliation:
lischka@uni-paderborn.de, University of Paderborn, Department of Physics, Warburger Srasse 100, Paderborn, 33095, Germany
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Abstract

Room temperature near-infrared intersubband transitions were observed in MBE grown non-polar cubic GaN/AlN superlattice structures. The peak wavelengths of these transitions were observed in the spectral region of 1.5–2.0 μm and were theoretically supported using a transfer matrix approach. All samples were unintentionally doped and grown on 3C-SiC substrates with a 100 nm GaN buffer. Each structure consisted of a 20 periods of GaN/AlN superlattice capped with 100nm of GaN. The thickness of the AlN barrier was fixed at 1.35, while the thickness of the GaN well was varied between 1.6 and 2.1nm. Electrochemical Capacitance Voltage (ECV) measurements allowed direct measurement of the intrinsic carrier concentration in a thick unintentionally doped cubic GaN layer, which confirmed sufficient population of the ground state energy level.

Keywords

optical propertiesnitridemolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1055: Symposium GG – Excitons and Plasmon Resonances in Nanostructures , 2007 , 1055-GG13-02
Copyright
Copyright © Materials Research Society 2008

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