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Nd:YVO4 Laser Crystallization for Thin Film Transistors with a High Mobility

  • Ralf Dassow (a1), Jürgen R. Köhler (a1), Melanie Nerding (a2), Horst P. Strunk (a2), Youri Helen (a3), Karine Mourgues (a3), Olivier Bonnaud (a3), Tayeb Mohammed-Brahim (a3) and Jürgen H. Werner (a1)...

Abstract

We crystallize amorphous silicon films with a frequency doubled Nd:YVO4 laser operating at a repetition frequency of up to 50 kHz. A sequential lateral solidification process yields polycrystalline silicon with grains longer than 100 μm and a width between 0.27 and 1.7 μm depending on film thickness and laser repetition frequency. The average grain size is constant over the whole crystallized area of 25 cm2. Thin film transistors with n- type and p-type channels fabricated from the polycrystalline films have average field effect mobilities of μn = 467 cm2/Vs and μp = 217 cm2/Vs respectively. As a result of the homogeneous grain size distribution, the standard deviation of the mobility is only 5%.

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Nd:YVO4 Laser Crystallization for Thin Film Transistors with a High Mobility

  • Ralf Dassow (a1), Jürgen R. Köhler (a1), Melanie Nerding (a2), Horst P. Strunk (a2), Youri Helen (a3), Karine Mourgues (a3), Olivier Bonnaud (a3), Tayeb Mohammed-Brahim (a3) and Jürgen H. Werner (a1)...

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