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The nature of ripples and islands in strained SiGe/Si heteroepitaxy: nucleation vs. instability phenomena

Published online by Cambridge University Press:  10 February 2011

S.H. Christiansen
Affiliation:
Institut für Werkstoffwissenschaften -Mikrocharakterisierung-, Universität Erlangen, Cauerstr.6, 91058 Erlangen, Germany e-mail: sechrist ww.uni-erlangen.de
M. Albrecht
Affiliation:
Institut für Werkstoffwissenschaften -Mikrocharakterisierung-, Universität Erlangen, Cauerstr.6, 91058 Erlangen, Germany
M. Becker
Affiliation:
Institut für Werkstoffwissenschaften -Mikrocharakterisierung-, Universität Erlangen, Cauerstr.6, 91058 Erlangen, Germany
H.P. Strunk
Affiliation:
Institut für Werkstoffwissenschaften -Mikrocharakterisierung-, Universität Erlangen, Cauerstr.6, 91058 Erlangen, Germany
H. Wawra
Affiliation:
Institut für Kristallzüchtung, Rudower Chaussee 6, 12489 Berlin, Germany
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Abstract

Using liquid phase epitaxy from Bi solution in the temperature range 550°–700°C at low growth rates we study the formation of ripples and islands and their interdependence. As main results we find from the dependencies on growth time and temperature that ripples are an instability phenomenon and that islands nucleate thermally activated. Island nucleation on a ripple template (that is, as an instability phenomenon, highly ordered) has huge impact on the achievable order of the islands.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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