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The Nature of Native Defects in LEC grown Semi-Insulating GaAs by Thermally Stimulated Current Spectroscopy

  • Zhaoqiang Fang (a1), Lei Shan (a1), T. E. Schlesinger (a1) and A. G. Milnes (a1)

Abstract

Traps have been studied by thermally stimulated current spectroscopy (TSC) with intrinsic (1.96 eV) and extrinsic (1.15 eV) light for both In doped and undoped LEC materials grown under various non-stoichiometric conditions. Significant differences are seen in the bulk trap spectra associated with Ga-rich and As-rich material and with isoelectronic In doping. Proximity wafer-annealing at 950° C has been shown to improve minority carrier lifetime in n-type GaAs and we show that in semi-insulating GaAs this causes changes in trap structure. From such thermal studies and the effects of non-stoichiometric growth, the probable nature of the traps commonly seen is inferred.

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References

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1 Fang, Z. Q., Shan, L., Schlesinger, T. E. and Milnes, A. G., to be published in Mater. Sci. & Engr., vol. B (1989).
2 Look, D. C., Semiconductors and Semimetals 19, 75 (1983).
3 Bube, R. H., Photoconductivity of Solids, (Wiley, New York 1960).
4 Milnes, A. G., Deep Impurities in Semiconductors, (Wiley, New York 1973), p. 236.
5 Martin, G. M. and Bois, D., Electrochem. Soc. Ext. Abstr. 78–3, 32 (1978).
6 Wong, D., Kim, H. K., Fang, Z. Q., Schlesinger, T. E. and Milnes, A. G., J.Appl. Phys. 66, 2002 (1989).

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