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Nature and Formation of Non-Radiative Defects in GaNAs And InGaAsN

  • W. M. Chen (a1), N. Q. Thinh (a1), I. A. Buyanova (a1), P. N. Hai (a1), H. P. Xin (a2), C. W. Tu (a2), Wei Li (a3) and M. Pessa (a3)...

Abstract

The optically detected magnetic resonance (ODMR) technique has been employed to examine the nature and formation mechanism of non-radiative defects in GaNAs and InGaAsN. In both alloys, two defects were observed and were shown to be deep-level, non-radiative recombination centers. One of the defects has been identified as a complex involving an AsGa antisite. These two defects gain more importance with increasing N composition up to 3%, presumably due to an increase in their concentration. With a further higher N composition, the defects start to lose importance in carrier recombination that is attributed to an increasingly important role of other new non-radiative channels introduced with a high N composition. On the other hand, effect of In composition up to 3% seems to be only marginal. Both defects were shown to be preferably introduced in the alloys during low-temperature growth by molecular beam epitaxy (MBE), but can be rather efficiently removed by post-growth rapid thermal annealing.

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Nature and Formation of Non-Radiative Defects in GaNAs And InGaAsN

  • W. M. Chen (a1), N. Q. Thinh (a1), I. A. Buyanova (a1), P. N. Hai (a1), H. P. Xin (a2), C. W. Tu (a2), Wei Li (a3) and M. Pessa (a3)...

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