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Native Point Defect Interactions in ZGP Crystals under Influence of e-Beam Irradiation.

Published online by Cambridge University Press:  11 February 2011

A.I. Gribenyukov ,
G.A. Verozubova ,
A. Yu. Trofimov ,
A.W. Vere  and
C. J. Flynn
A.I. Gribenyukov
Affiliation:
Institute for Optical Monitoring, SD RAS, 10/3 Academicheskii, Tomsk, 634021, Russia fax: 7(3822)258950 tel:7(3822)259589 e-mail: loc@iom.tomsknet.ru
G.A. Verozubova
Affiliation:
Institute for Optical Monitoring, SD RAS, 10/3 Academicheskii, Tomsk, 634021, Russia fax: 7(3822)258950 tel:7(3822)259589 e-mail: loc@iom.tomsknet.ru
A. Yu. Trofimov
Affiliation:
Institute for Optical Monitoring, SD RAS, 10/3 Academicheskii, Tomsk, 634021, Russia fax: 7(3822)258950 tel:7(3822)259589 e-mail: loc@iom.tomsknet.ru
A.W. Vere
Affiliation:
The Crystal Consortium Ltd., Colville Building, North Portland St., Glasgow, G1 1XN, UK
C. J. Flynn
Affiliation:
QinetiQ Ltd. St Andrews Rd., Malvern Worcestershire UK WR14 3PS, UK
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Abstract

Optical absorption in the defect-related region of highly efficient non-linear ZnGeP2 crystals under e-beam irradiation and post-irradiation anneals has been investigated.

Partially irreversible changes of the absorption were found in the spectral range 0.9–2.5 μm (0.5–1.3 eV) after irradiation and subsequent low-temperature anneals. Data obtained do not support the vacancy model for ZnGeP2 absorption in the 0.5–1.3 eV range.

The least squares fit for the parameters of the theoretical dependence of optical absorption cross-section to the experimentally measured ZnGeP2 optical absorption coefficient spectra show that the defect-related absorption in 0.5–1.3 eV region is caused by deep donor levels with energy position E=Ev+(0.85–0.90) eV.

Significant changes in the energy spectrum of the dominant optically active centers have been observed under influence of e-beam irradiation and post-irradiation anneals.

Based on the optical absorption measurements obtained for as-grown, annealed and e-irradiated ZnGeP2 crystals, a model of point defect interactions has been proposed. This takes into account both the reversible interactions, such as the formation of donor-acceptor pairs, and the irreversible interactions of a quasi-chemical type.

The behavior of the energy spectrum of the optically active defects is discussed in terms of the modes of interaction between the initial point defects and those generated by irradiation. The analysis performed showed that the best agreement with experimental data is reached when it is assumed that optical defect-related absorption in the 0.5–1.3 eV range related mainly to the disordering defect in the cation sublattice of ZnGeP2, namely, to atoms of Ge substituting for Zn.

Defect concentration profiles created by e-irradiation in ZGP crystals of different thickness were calculated. The optimum conditions for providing a uniform defect distribution with depth in irradiated ZnGeP2 samples were determined.

The optimal e-beam irradiation fluences, giving maximum ZnGeP2 enlightenment, allowed us to reduce the defect-related absorption down to a value of 0.01 cm-1 at 2 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.40
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Verozubova, G.A., Gribenyukov, A.I., Vere, A.W., Flynn, C.J. and Ivanov, Yu.F., Infrared Applications of Semiconductors III, MRS Symposium held November 29-December2, 1999, Boston, Massachesetts, USA, 2000. V. 607. P. 457–463.Google Scholar
2. Ang, H.-G., Chng, L.-L., Lee, Y.-W., Flynn, C.J., Smith, P.C., and Vere, A.W., MRS fall Meeting, Boston, MA, USA, 29 Nov.-3 Dec. 1999, Abstracts, p. 711.Google Scholar
3. Brudnyi, V.N., Budnitskii, D.L., Krivov, M.A., Prochukhan, V.D., Rud', Yu. V., and Yakovenko, A.A., Phys. Status Solidi (a), 1978, v. 50, pp. 379–384.Google Scholar
4. Setzler, S. D., Halliburton, L.E., Giles, N.C., Schunemann, P.G. and Pollak, T. M., MRS Fall Meeting Proceedings, 1996.Google Scholar
5. Verozubova, G.A., Gribenyukov, A.I., Korotkova, V.V., and Ruzaikin, M.P., Material Science and Engineering B48 (1997) 191–197.Google Scholar
6. Gribenyukov, A.I., Verozubova, G.A., Trofimov, A., Yunda, N.T., Proceedings of 6th International Conference on Modification of Materials with Particle Beams and Plasma Flows, 23–28 September 2002, Tomsk, Russia, p. 311–314.Google Scholar
7. Kopylov, A.A., Pikhtin, A.P., Fizika i technika poluprovodnikov (Russian). Vol. 8, N12, 1974.Google Scholar
8. Ternary chalcopyrite semiconductors: growth, electronic properties and applications, ed. Shay, J.L. and Wernick, J.H., Pergamon Press, New York, 1975, 276 p.Google Scholar