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Narrow Si doping distributions in 6-doped GaAs, Al0.3Ga0.7As and Quantum Wells grown by Gas Source Molecular Beam Epitaxy

  • J.E. Cunningham (a1), T.H. Chin (a1), B. Tell (a1), W. Jan (a1), J. A. Ditzenberger (a1), T. Y. Kuo (a1) and C. Fonstad (a2)...

Abstract

We report very small interdiffusion and surface segregation of Si in δ-doped GaAs, A10.3Gao.7As and Quantum Wells grown at 580 C by Gas Source Molecular Beam Epitaxy. Capacitance-Voltage profiles of δ-doped layers are 38 Å wide for growth at 580 C and further, insignificant profile narrowing is observed at 530C and below. Much wider profiles are observed at equivalent substrate temperature for As4 growth. Atomic diffusion of Si in δ-doped Al0.3Ga0.7As is found to have a rate of D0=5× 10cm2/sec with an activation energy of 1.8 eV.

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[1] English, J. H., Gossard, A. C., Stormer, H.L. and Baldwin, K. W., Appl. Phys. Lett. 50, 1826 (1987).
[2] Cunningham, J. E., Tsang, W. T., Timp, G., Schubert, E.F. and Chiu, T.H. Phys. Rev. B 37 4317 (1988).
[3] Shayegan, M., Goldman, V.J., Jiang, C., Sajoto, T. and Santos, M., Appl. Phys. Lett. 50, 1086 (1988).
[4] Schubert, E. F., Cunningham, J. E. and Tsang, W. T. Phys. Rev. B 36, 1348,1987.
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[7] Schubert, E. F., Stark, J. B., Ullich, B. and Cunningham, J. E., Appl. Phys. Lett., 52, 1508 (1988).
[8] Cunningham, J. E., Timp, G., Chang, A. M., Chiu, T. H., Jan, W., Schubert, E. F. and Tsang, W. T., Proceedings of the MBE Workshop V, p. 342, (1988), Sapporo, Jpn.
[9] Harris, J. J., Beall, R.B., Clegg, J. B., Foxon, C. T., Battersby, S. J., Lacklison, D. E., Hellon, C. M. and Duggan, G., “Proceeding of the MBE Workshop V”, p.345, Sapporo, Jpn. (1988)
[10] The highest mobility GaAs obtained to date have been grown at substrate temperatures above 580C. See Cunningham, J. E., Chiu, T. H., Timp, G., Agyekum, E. and Tsang, W. T., Appl. Phys. Lett 53, 1285, (1988) and N. Chand, R. C. Miller, A. M. Sergent, S. K Sputz and D. V. Lang, Appl. Phys. Lett. 52, 1721 (1988).
[11] Kuo, T. Y., Cunningham, J. E., Timp, G., Tsang, W. T., Schubert, E. F., Jan, W. and Fonstad, C., Proceedings of the 1988 Electronics Devices and Materials Symposium, p. 108, (1988).
[12] Heddrick, R. private communication.
[13] Chai, Y. G., Chow, R. and Wood, C. E. C., Appl. Phys. Lett. 39, 800, (1981).
[14] Schubert, E. F., Tu, C. W., Kropf, R., Kuo, J. M., L Lundardi, Appl. Phys. Lett. in press.

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Narrow Si doping distributions in 6-doped GaAs, Al0.3Ga0.7As and Quantum Wells grown by Gas Source Molecular Beam Epitaxy

  • J.E. Cunningham (a1), T.H. Chin (a1), B. Tell (a1), W. Jan (a1), J. A. Ditzenberger (a1), T. Y. Kuo (a1) and C. Fonstad (a2)...

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