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Nanopatterning of Si/SiGe Two-dimensional Hole Gases by PFOTS-aided AFM Lithography of Carrier Supply Layer

Published online by Cambridge University Press:  01 February 2011

Kun Yao  and
James C Sturm
Kun Yao
Affiliation:
kyao@princeton.edu, Princeton University, Princeton Institute for the Science and Technology of Materials,Department of Electrical Engineering, E-Quad, Olden Street, Princeton, NJ, 08544, United States, 1-609-258-6624, 1-609-258-1840
James C Sturm
Affiliation:
sturm@princeton.edu, Princeton University, Princeton Institute for the Science and Technology of Materials,Department of Electrical Engineering, E-Quad, Olden Street, Princeton, NJ, 08544, United States
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Abstract

The nanopatterning of Si/SiGe layers by PFOTS (perfluorooctyl trichlorosilane) -aided AFM (atomic force microscopy) lithography is demonstrated. We use self-assembled PFOTS monolayers as a resist for AFM exposure and then transfer patterns in to underlying SiGe layers by a two-step selective wet etching. Linewidths well under 100nm can be achieved with improved uniformity and repeatability compared to AFM lithography without PFOTS. This lithography technique was used to pattern the carrier supply layer in Si/SiGe 2-D hole gases to localize holes for epitaxially passivated quantum dot applications.

Keywords

Sinanoscaleself-assembly
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 921: Symposium T – Nanomanufacturing , 2006 , 0921-T02-08
Copyright
Copyright © Materials Research Society 2006

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