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Multi-Layered SiC Nanocrystals Embedded in SiO2 Dielectrics for Nonvolatile Memory Application

  • Dong Uk Lee (a1), Tae Hee Lee (a2), Eun Kyu Kim (a3), Jin-Wook Shin (a4) and Won-Ju Cho (a5)...

Abstract

A nonvolatile memory device with the multi-layered SiC nanocrystals embedded in the SiO2 dielectrics for long-term data storage was fabricated and its electrical properties were evaluated. The SiC nanocrystals were formed by using post thermal annealing process. The transmission electron microscope analysis showed the multi-layered SiC nanocrystals between the tunnel and the control oxide layers. The average size and density of the SiC nanocrystals were approximately 5 nm and 2×1012 cm-2, respectively. The memory window of nonvolatile memory devices with the multi-layered of SiC nanocrystals was about 2.7 V during the operations at ±10 V for 700 ms, and then it was maintained around at 1.1 V after 105 sec.

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Keywords

Multi-Layered SiC Nanocrystals Embedded in SiO2 Dielectrics for Nonvolatile Memory Application

  • Dong Uk Lee (a1), Tae Hee Lee (a2), Eun Kyu Kim (a3), Jin-Wook Shin (a4) and Won-Ju Cho (a5)...

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