Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-21T04:07:03.560Z Has data issue: false hasContentIssue false

Multilayer Membranes For X-Ray Lithography

Published online by Cambridge University Press:  15 February 2011

Alex R. Shimkunas
Affiliation:
Nanostructures, Inc., 1080 Marsh Road, Menlo Park, CA 94025
Philip E. Mauger
Affiliation:
Nanostructures, Inc., 1080 Marsh Road, Menlo Park, CA 94025
Lawrence P. Bourge
Affiliation:
Applied Science and Technology, Inc., 35 Cabot Road, Woburn, MA 01801
Get access

Abstract

Multilayer x-ray lithography membranes were designed and fabricated. Consisting of alternating layers of SiC and SiNx, the membranes were designed to have low reflectance for improved optical alignment of x-ray masks, high fracture strength, superior chemicaletch resistance, and high manufacturing yield. The membranes were prepared from multilayer coatings deposited on silicon wafers in an electron cyclotron resonance chemical vapor deposition system. Membranes with less than 5% reflectance over 150 nm bandwidths were made. External SiNx layers increased the chemical etch resistance of the membranes. The fracture strength was 2–3 times that of SiC, and the membrane yield was 50% higher than that of single-layer SiC. Field-emission SEM of the multilayer coating cross-section showed the presence of 20–150 nm defects near the layer interfaces. The layering confines or stabilizes the defects, thereby increasing the membrane yield and fracture strength.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Shimkunas, A. R., Mauger, P. E., Bourget, L. P., Post, R. S., Smith, L., Davis, R. F., Wells, G. M., Cerrina, F., McIntosh, R. B., J. Vac. Sci. Technol. B9, 3258 (1991).Google Scholar
2 Lambropoulos, J. C., J. Vac. Sci. Technol. A9', 2503 (1991).CrossRefGoogle Scholar
3 TFCalc , Software Spectra, Portland, OR. Google Scholar
4 Selwyn, G. S., J. Vac. Sci. Technol. B9, 3487 (1991).CrossRefGoogle Scholar
5 Selwyn, G. S., Heidenreich, J. E., Hailer, K. L., J. Vac. Sci. Technol. A9, 2817 (1991).Google Scholar
6 Carlile, R. N., Geha, S., O'Hanlon, J. F., Stewart, J. C., Appl. Phys. Lett. 59, 1167 (1991).Google Scholar
7 Anderson, H. M., Jairath, R., Mock, J. L., J. Appl. Phys. 67, 3999 (1990).Google Scholar
8 Verdeyen, J. T., Beberman, J., Overzet, L., J. Vac. Sci. Technol. A8, 1851 (1990).Google Scholar