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Morphology of Ag Islands Grown on GaAs (110) at Low Coverage: Monte Carlo Simulations

Published online by Cambridge University Press:  21 February 2011

A. Challa ,
J. Drucker  and
T.S. Cale
A. Challa
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704, challa@matsci2.la.asu.edu
J. Drucker
Affiliation:
Department of Physics, University of Texas at El Paso, El Paso, TX 79968-0515, jdrucker@utep.edu
T.S. Cale
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6206, cale@enwsl65.eas.asu.edu
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Abstract

The growth morphology of Ag on GaAs (110) surfaces, at low coverages, is investigated with Monte Carlo simulations using a solid-on-solid model. Experimentally Ag deposited at room temperature forms 3D isotropic islands and forms needle-like islands elongated along the <110> direction when deposited at 250°C. Preliminary simulation results using 2D island growth model indicated that the elongation of islands at 250°C deposition is due to anisotropic surface diffusion and nearest-neighbor interactions along the <100> and <110> directions. The island morphologies obtained using a 3D island growth model are in good agreement with experimentally observed morphologies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 103
Copyright
Copyright © Materials Research Society 1996

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References

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