Skip to main content Accessibility help
×
Home

Morphology and Interface chemistry of the Initial Growth of GAN and ALN on α-SIC and Sapphire

  • Z. Sitar (a1), L. S. Smith (a1), M. J. Paisley (a1) and R. F. Davis (a1)

Abstract

The morphology and interface chemistry occurring during the initial stages of growth of GaN and A1N layers has been obtained. Films were grown using gas source MBE equipment containing an ECR plasma source to activate molecular nitrogen. The experiments consisted of sequential depositions of about one monolayer thick films and XPS analysis. Evidence for silicon nitride formation on the SiC surface was obtained from the studies of both the Si oxidation states and the substrate peak intensity dependence on film thickness. The growth of GaN on sapphire appeared to occur via the Stranski-Krastanov mode, while the growth on SiC showed characteristics of three-dimensional growth. AlN grew in a layer-by-layer mode on both substrates.

Copyright

References

Hide All
1. Khan, M. R. H., Koide, Y., Itoh, H., Sawaki, N. and Akasaki, I., Solid State. Comm. 60, 509 (1986).
2. Yoshida, S., Misawa, S. and Gonda, S., J. Appl. Phys. 53, 5844 (1982).
3. Koide, Y., Itoh, H., Khan, M. R. H., Hiramatu, K., Sawaki, N. and Akasaki, I, J. Appl. Phys. 61, 4540(1987).
4. Sitar, Z., Paisley, M. J., Yan, B., Ruan, J., Choyke, J. W., and Davis, R. F., J. Vac. Sci. Technol. B 8, 316(1990).
5. Sitar, Z., Paisley, M. J., Yan, B., Ruan, J., Choyke, J. W., and Davis, R. F., Thin Solid Films, 200, 311(1991).
7. Adamson, A.W., Physical Chemistry of Surfaces, 5th ed. John Wiley and Sons, Inc., N.Y., 1990
6. Feldman, L.C. and Mayer, J.W., Fundamentals of Surface and Thin Film Analysis, North-Holland, N.Y.
8. Sitar, Z., Paisley, M. J., Smith, D. K., and Davis, R. F., Rev. Sci. Instr. 61, 2407 (1990).
9. Bozso, F., Muehlhoff, L., Trenary, M., Choyke, W.J., and Yates, J.T. Jr, J. Vac. Sci. Technol. A 2, 1271 (1984).
10. Taylor, P.A., Bozack, M., Choyke, W.J., and Yates, J.T. Jr, J. Appl. Phys. 65, 1099 (1989).
11. NIST X-Ray Photoelectron Spectroscopy Database, version 1.0, NIST Standard Reference Database 20. National Institute of Standards and Technology, Gaithersburg, MD, 1989.
12. Hedman, J. and Mårtensson, N., Physica Scripta 22, 176 (1980).
13. Amano, H., Sawaki, N., Akasaki, I., Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).

Related content

Powered by UNSILO

Morphology and Interface chemistry of the Initial Growth of GAN and ALN on α-SIC and Sapphire

  • Z. Sitar (a1), L. S. Smith (a1), M. J. Paisley (a1) and R. F. Davis (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.