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Morphological Studies of Polysilicon Emitter Contacts

Published online by Cambridge University Press:  26 February 2011

John C. Bravman ,
Gary L. Patton ,
Robert Sinclair  and
James D. Plummer
John C. Bravman
Affiliation:
Materials Science and Engineering, Stanford University, Stanford, CA 94305 Integrated Circuits Laboratory, Stanford University, Stanford, CA 94305
Gary L. Patton
Affiliation:
Materials Science and Engineering, Stanford University, Stanford, CA 94305 Integrated Circuits Laboratory, Stanford University, Stanford, CA 94305
Robert Sinclair
Affiliation:
Materials Science and Engineering, Stanford University, Stanford, CA 94305 Integrated Circuits Laboratory, Stanford University, Stanford, CA 94305
James D. Plummer
Affiliation:
Materials Science and Engineering, Stanford University, Stanford, CA 94305 Integrated Circuits Laboratory, Stanford University, Stanford, CA 94305
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Abstract

Using high resolution lattice imaging techniques, the morphology of thepolycrystalline silicon - single crystal silicon interface has been correlated to (1) the surface treatment used prior to polysilicon deposition, (2) the polysilicon implant dose, and (3) high temperature annealing. Specimens which were chemically oxidized prior to deposition exhibited a continuous layer of amorphous oxide ≈1.5nm thick. High temperature annealing produces small discontinuities in this oxide which allow the polysilicon to make direct contact with, and become epitaxially aligned to, the substrate. Specimens which were etched in HF prior to deposition were characterized by nearly oxide-free interfaces, which, following implantation and annealing, exhibited regions of epitaxial realignment significantly larger than those found in the chemically oxidized films. Heavily implanted films annealed at high temperature displayed almost complete epitaxial realignment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 461
Copyright
Copyright © Materials Research Society 1985

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