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The Morphological Stability of Strained Epitaxial Layers

Published online by Cambridge University Press:  15 February 2011

B. W. Wessels
B. W. Wessels*
Affiliation:
Dept. of Materials Science and Engineering, Northwestern University, Evanston, Ill 60208
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Abstract

The morphological stability of strained-layer thin films is analyzed using classical nucleation theory. For the case where strain relaxation occurs by formation of coherent islands, the model predicts that the critical thickness for transition from two-dimensional (2D) to three dimensional (3D) growth depends inversely on the square of the misfit. The predicted dependence of critical thickness on misfit is in agreement with recent experimental studies on the heteropitaxy of III-V compounds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 440: Symposia CA – Structure and Evolution of Surfaces , 1996 , 335
Copyright
Copyright © Materials Research Society 1997

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