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Morphological, Chemical and Structural Study of Sputtered Al/Al2O3 Multilayers

Published online by Cambridge University Press:  10 February 2011

C. Le Paven-Thivet ,
P. Aubert ,
S. Fusil ,
A. Zozime ,
C. Malibert  and
Ph. Houdy
C. Le Paven-Thivet
Affiliation:
L.P.S.C., UMR CNRS 8635, Meudon, France, Claire.Lepaven@chimie.univ-evry.fr
P. Aubert
Affiliation:
L.P.S.C., UMR CNRS 8635, Meudon, France, Claire.Lepaven@chimie.univ-evry.fr
S. Fusil
Affiliation:
L.M.N., Université Evry, Evry, France
A. Zozime
Affiliation:
L.M.N., Université Evry, Evry, France
C. Malibert
Affiliation:
L.P.S.C., UMR CNRS 8635, Meudon, France, Claire.Lepaven@chimie.univ-evry.fr
Ph. Houdy
Affiliation:
L.P.S.C., UMR CNRS 8635, Meudon, France, Claire.Lepaven@chimie.univ-evry.fr
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Abstract

For purpose of enhancement of mechanical properties, Al/Al2O3 films, with thickness A in the nanometric scale, were deposited on silicon substrate by reactive rf sputtering, at substrate temperatures Ts ranging from −90°C to 600°C. The characterisation (FEG-SEM, AFM, SIMS, XRR) has shown that Al/Al2O3 films are granular and rough, in correlation with the behavior of single alumnium films. The minimal roughness values are obtained at low Ts (−90°C and 25°C). The Λ = 20 rim-films are real multilayers, as confirmed by SIMS and XRR. Nevertheless, the multilayering character, i.e. the existence of multilayers, decreases when Ts increases. At low Ts, the relevant parameter to explain the weakness of stratification of Al/Al2O3 films is the roughness of layers, while at high Ts, the chemical interdiffusion clearly dominates, resulting in a no periodic structure at Ts = 600°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 616: Symposium I – New Methods, Mechanisms & Models of Vapor Deposition , 2000 , 81
Copyright
Copyright © Materials Research Society 2000

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