Skip to main content Accessibility help
×
Home

Morphological Changes to InAs Quantum Dots Caused by GaAs Overgrowth

  • J.B. Smathers (a1), P. Ballet (a1) and G.J. Salamo (a1)

Abstract

We have used in-situ scanning tunneling microscopy (STM) to study the morphological changes to InAs quantum dots (QD's) caused by overgrowth of a GaAs capping layer. We demonstrate that the InAs islands are highly unstable during GaAs overgrowth and that this morphological instability confirms that significant cation intermixing occurs during overgrowth. In particular, the anisotropic nature of the volume redistribution indicates that In surface diffusion is the specific mechanism of In transfer away from the islands. Images taken after 10 monolayers or more of overgrowth reveal that more rapid GaAs overgrowth better preserves the 3D-islands morphology.

Copyright

References

Hide All
1. Moison, J.M., Houzay, F., Barthe, F., Leprince, L., Andre, E. and Vatel, O., Appl. Phys. Lett. 64, 196 (1993)10.1063/1.111502
2. Leonard, D., Pond, K., and Petroff, P.M., Phys. Rev. B 50, 11687 (1994).10.1103/PhysRevB.50.11687
3. Leonard, D., Krishnamurthy, M., Reaves, C.M., Denbaars, S.P. and Petroff, P.M., Appl. Phys. Lett. 63, 3203 (1993).10.1063/1.110199
4. Marzin, J.Y., Gerard, J.M., Izrael, A., Barrier, D. and Bastard, G., Phys. Rev. Lett. 73, 716 (1994).10.1103/PhysRevLett.73.716
5. Steer, M.J., Mowbray, D.J., Tribe, W.R., Skolnick, M.S. and Sturge, M.D., Hopkinson, M., Cullis, A.G., Whitehouse, C.R., and Murray, R., Phys. Rev. B 54, 17738 (1996).10.1103/PhysRevB.54.17738
6. Yang, Weidong, Lowe-Webb, R.R., Lee, H.L. and Sercel, P.C., Phys. Rev. B 56, 13314 (1997).10.1103/PhysRevB.56.13314
7. Fricke, M., Lorke, A., Kotthaus, J.P., Medeiros-Robero, G. and Petroff, P.M., Europhys. Lett. 36, 197 (1996).10.1209/epl/i1996-00210-x
8. Huffaker, D.L., Baklenov, O., Graham, L.A., Streetman, B.G. and Deppe, D.G., Appl. Phys. Lett 70, 2356 (1997).10.1063/1.118872
9. Phillips, J., Kamath, K., Brook, T. and Bhattacharaya, P., Appl. Phys. Lett. 64, 196 (1994).
10. Tersoff, J., Phys. Rev. Lett. 81, 3183 (1998).10.1103/PhysRevLett.81.3183
11. Kobayashi, N.P., Ramachandran, T.R., Chen, P., and Madhukar, A., Appl. Phys. Lett. 68, 3299 (1996).10.1063/1.116580
12. Hasegawa, Y., Kiyama, H., Xue, Q.K. and Sakuri, T., Appl. Phys. Lett. 72, 2265 (1998).10.1063/1.121273
13. Tanaka, I., Kamiya, I., Sakaki, H., Qureshi, N., Allen, S.J., Petroff, P.M., Appl. Phys. Lett. 74, 844 (1999).10.1063/1.123402
14. Xie, Q., Madhukar, A., Chen, P., and Kobayashi, N.P., Phys. Rev. Lett. 75, 2542 (1995).10.1103/PhysRevLett.75.2542
15. Joyce, P.B., Krzyzewski, T.J., Bell, G.R., Joyce, B.A. and Jones, T.S., Phys. Rev. B 58, R15 981 (1998).10.1103/PhysRevB.58.5594
16. Solomon, G.S., Trezza, J.A., Marshall, A.F., and Harris, J.S., Phys. Rev. Lett. 76, 952 (1996).10.1103/PhysRevLett.76.952
17. Wu, Warren, Tucker, J.R., Solomon, G.S., and Harris, James, Appl. Phys. Lett 71, 1083 (1997).10.1063/1.120553
18. Rubin, M.E., Medeiros-Ribero, G, O'Shea, JJ, Chin, M.A., Lee, E.Y., Petroff, P.M. and Narayanamurti, V., Phys. Rev. Lett. 77, 5268 (1996).10.1103/PhysRevLett.77.5268
19. Lian, G.D., Yuan, J., Brown, L.M., Kim, G.H. and Ritchie, D.A., Appl. Phys. Lett. 73, 49 (1998).10.1063/1.121719
20. Stevens, P.D., Malik, S., McPherson, G., Childs, D., Roberts, C., Murray, R., Joyce, B.A., and Davock, H., Phys. Rev. B 58, R10 127 (1998).
21. Garcia, J.M., Medeiros-Ribero, G., Schmidt, K., Ngo, T., Feng, J.L., Lorke, A., Kotthaus, J. and Petroff, P.M., Appl. Phys. Lett. 71, 2014 (1997).10.1063/1.119772
22. Lengrand, B., Grandidier, B., Nys, J.P., Stievenard, D., Garcia, J.M., and Thierry-Mieg, V., Appl. Phys. Lett. 73, 96 (1998).10.1063/1.121792
23. Smathers, J.B., Bullock, D.W., Ding, Z., Salamo, G.J., Thibado, P.M., Gerace, B. and Wirth, W., J.Vac. Sci. Technol. B 16, 3112 (1998).10.1116/1.590496
24. Thibabo, P.M., Salamo, G.J., Baharav, Y., J. Vac. Sci. Technol. B 17, 253 (1999).10.1116/1.590508
25. Lee, H., Lowe-Webb, R., Yang, W. and Sercel, P. C., Appl. Phys. Lett. 72, 812 (1998).10.1063/1.120901
26. Yang, H., Labella, V.P., Bullock, D.W., Ding, Z., Smathers, J.B., and Thibado, P.M., J. Cryst. Gr. (accepted for publication August 1998).
27. Itoch, M., Bell, G.R., Avery, A.R., Jones, T.S., Joyce, B.A. and Vvedenski, D.D., Phys. Rev. Lett. 81, 633 (1998).10.1103/PhysRevLett.81.633

Related content

Powered by UNSILO

Morphological Changes to InAs Quantum Dots Caused by GaAs Overgrowth

  • J.B. Smathers (a1), P. Ballet (a1) and G.J. Salamo (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.