Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-07-05T14:46:22.939Z Has data issue: false hasContentIssue false

Monte Carlo Simulation of the Growth of ZnSe by MBE

Published online by Cambridge University Press:  26 February 2011

R. Venkatasubramanian
Affiliation:
Purdue University, West Lafayette, Indiana-47907
N. Otsuka
Affiliation:
Purdue University, West Lafayette, Indiana-47907
S. Datta
Affiliation:
Purdue University, West Lafayette, Indiana-47907
L. A. Kolodziejski
Affiliation:
Purdue University, West Lafayette, Indiana-47907
R. L. Gunshor
Affiliation:
Purdue University, West Lafayette, Indiana-47907
Get access

Abstract

A Monte Carlo study of the growth of ZnSe by Molecular beam epitaxy is presented. The study is focused on the role of surface kinetic reactions on the structural quality of the epilayers. Two different models for the incorporation of Se molecules, one with a highly reactive physisorbed state and the other with a relatively nonreactive physisorbed state are employed for simulations. It is shown that the structural quality of the epilayers is very sensitive to the flux ratio if the physisorbed state is relatively nonreactive. It is also shown that if the physisorbed state is highly reactive, good quality epilayers are obtained over a wide range of flux ratio.

Type
Articles
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yao, T.., “MBE of II-VI compounds” in “The technology of physics of Molecular beam epitaxy,” Plenum, NY, Ed. by Parker, E.H.C. and Dowsett, M.G..Google Scholar
2. Kolodziejski, L.A., Gunshor, R.L., Bonsett, T.C., Venkatasubramanian, R., Datta, S., Byslma, R.B., Becker, W.M. and Otsuka, N., Appl. Phys. Lett., 47, 169, (1985)Google Scholar
3. Kolodziejski, L.A., Gunshor, R.L., Otsuka, N., Datta, S., Becker, W.M., and Nurmikko, A.V., IEEE J. Quantum Elec, QE-22 1666, (1986).CrossRefGoogle Scholar
4. Gunshor, R.L., Kolodziejski, L.A., Molloch, M.R., Vaziri, M., Choi, C. and Otsuka, N., Appl. Phys. Lett., 50, 51, (1987)CrossRefGoogle Scholar
5. Foxon, C.T. and Joyce, B.A.., Surface Science, 64, 293, (1977); 50, 434, (1975)CrossRefGoogle Scholar
6. Foxon, C.T. and Boudry, M.R. and Joyce, B.A.., Surface Science, 44, 69, (1974).CrossRefGoogle Scholar
7. Madhukar, A., Surface Science, 132, 344, (1983).Google Scholar
8. Singh, J. and Bajaj, K.K.., J. Vac. Sci. Tech., B3(2), 576, (1984).CrossRefGoogle Scholar
9. Honig, R.E.., Kramer, D.A.., “Vapour pressure data for the solid and liquid elements,” RCA Review., 30, 285, (1969).Google Scholar
10. Hartmann, H.., “Wide gap II-IV compounds as electronic materials” in “Current topics in Material Science.” Ed. by Kaldis., pp 2.Google Scholar