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Molecular Dynamics studies of Dislocations in SI

Published online by Cambridge University Press:  25 February 2011

M.S. Duesbery ,
D.J. Michel  and
B. Joos
M.S. Duesbery
Affiliation:
GeoCenters Inc., Fort Washington, MD 20744
D.J. Michel
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
B. Joos
Affiliation:
Ottawa-Carleton Institute for Physics, University of Ottawa Campus, Ottawa, Ontario, Canada KIN 9B4
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Abstract

The mobility of dislocations in a model Silicon lattice is examined at an atomistic level using molecular dynamics. Straight and double-kinked 30° and 90° partial dislocation glide-set dipoles are modelled in a strain-free environment: reconstruction and antiphase defects are found to be present for 30° partial dislocations. The effects of applied shear strains and of temperatures up to the melting point are considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 941
Copyright
Copyright © Materials Research Society 1990

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References

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